JPH1154760A5 - - Google Patents

Info

Publication number
JPH1154760A5
JPH1154760A5 JP1997219955A JP21995597A JPH1154760A5 JP H1154760 A5 JPH1154760 A5 JP H1154760A5 JP 1997219955 A JP1997219955 A JP 1997219955A JP 21995597 A JP21995597 A JP 21995597A JP H1154760 A5 JPH1154760 A5 JP H1154760A5
Authority
JP
Japan
Prior art keywords
region
semiconductor film
group
semiconductor layer
gettering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997219955A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1154760A (ja
JP3844566B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP21995597A priority Critical patent/JP3844566B2/ja
Priority claimed from JP21995597A external-priority patent/JP3844566B2/ja
Priority to US09/123,000 priority patent/US6465288B1/en
Priority to KR1019980031637A priority patent/KR100577615B1/ko
Publication of JPH1154760A publication Critical patent/JPH1154760A/ja
Priority to US10/242,732 priority patent/US6670225B2/en
Publication of JPH1154760A5 publication Critical patent/JPH1154760A5/ja
Application granted granted Critical
Publication of JP3844566B2 publication Critical patent/JP3844566B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP21995597A 1997-07-30 1997-07-30 半導体装置の作製方法 Expired - Lifetime JP3844566B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP21995597A JP3844566B2 (ja) 1997-07-30 1997-07-30 半導体装置の作製方法
US09/123,000 US6465288B1 (en) 1997-07-30 1998-07-28 Method of manufacturing a semiconductor device using a crystalline semiconductor film
KR1019980031637A KR100577615B1 (ko) 1997-07-30 1998-07-30 반도체장치제조방법
US10/242,732 US6670225B2 (en) 1997-07-30 2002-09-13 Method of manufacturing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21995597A JP3844566B2 (ja) 1997-07-30 1997-07-30 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JPH1154760A JPH1154760A (ja) 1999-02-26
JPH1154760A5 true JPH1154760A5 (2) 2005-04-07
JP3844566B2 JP3844566B2 (ja) 2006-11-15

Family

ID=16743662

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21995597A Expired - Lifetime JP3844566B2 (ja) 1997-07-30 1997-07-30 半導体装置の作製方法

Country Status (3)

Country Link
US (2) US6465288B1 (2)
JP (1) JP3844566B2 (2)
KR (1) KR100577615B1 (2)

Families Citing this family (54)

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JP4056571B2 (ja) 1995-08-02 2008-03-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4180689B2 (ja) * 1997-07-24 2008-11-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3844566B2 (ja) * 1997-07-30 2006-11-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7166500B2 (en) * 1997-10-21 2007-01-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
KR100343134B1 (ko) * 1998-07-09 2002-10-25 삼성전자 주식회사 유전막형성방법
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US6878968B1 (en) 1999-05-10 2005-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP4712156B2 (ja) * 1999-05-10 2011-06-29 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7245018B1 (en) * 1999-06-22 2007-07-17 Semiconductor Energy Laboratory Co., Ltd. Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof
US6821827B2 (en) 1999-12-28 2004-11-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
TW507258B (en) 2000-02-29 2002-10-21 Semiconductor Systems Corp Display device and method for fabricating the same
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JP5078201B2 (ja) * 2000-07-11 2012-11-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4641598B2 (ja) * 2000-08-03 2011-03-02 株式会社半導体エネルギー研究所 半導体装置の作製方法
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TW515104B (en) * 2000-11-06 2002-12-21 Semiconductor Energy Lab Electro-optical device and method of manufacturing the same
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US6759313B2 (en) 2000-12-05 2004-07-06 Semiconductor Energy Laboratory Co., Ltd Method of fabricating a semiconductor device
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US6858480B2 (en) * 2001-01-18 2005-02-22 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
JP4926321B2 (ja) * 2001-01-24 2012-05-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6809023B2 (en) * 2001-04-06 2004-10-26 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device having uniform crystal grains in a crystalline semiconductor film
JP3961240B2 (ja) 2001-06-28 2007-08-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5127101B2 (ja) * 2001-06-28 2013-01-23 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100439347B1 (ko) * 2001-07-04 2004-07-07 주승기 실리콘 박막의 결정화 방법 및 이를 이용한 반도체 소자제조 방법
JP4267266B2 (ja) * 2001-07-10 2009-05-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2003077832A (ja) * 2001-08-30 2003-03-14 Sharp Corp 半導体装置及びその製造方法
TW589667B (en) * 2001-09-25 2004-06-01 Sharp Kk Crystalline semiconductor film and production method thereof, and semiconductor device and production method thereof
US6727122B2 (en) * 2001-12-29 2004-04-27 Lg. Philips Lcd Co., Ltd. Method of fabricating polysilicon thin film transistor
JP3961310B2 (ja) 2002-02-21 2007-08-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4115158B2 (ja) * 2002-04-24 2008-07-09 シャープ株式会社 半導体装置およびその製造方法
JP2003330388A (ja) * 2002-05-15 2003-11-19 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
US6861338B2 (en) 2002-08-22 2005-03-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and method of manufacturing the same
JP4115252B2 (ja) * 2002-11-08 2008-07-09 シャープ株式会社 半導体膜およびその製造方法ならびに半導体装置およびその製造方法
KR100977538B1 (ko) * 2003-01-10 2010-08-23 엘지디스플레이 주식회사 폴리실리콘 박막의 제조방법
KR100530041B1 (ko) * 2003-03-28 2005-11-22 주승기 니켈 합금층을 이용한 다결정 실리콘 박막 형성방법 및이를 이용한 박막 트랜지스터의 제조방법
US7276402B2 (en) * 2003-12-25 2007-10-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7507617B2 (en) * 2003-12-25 2009-03-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
TWI293511B (en) * 2006-01-05 2008-02-11 Chunghwa Picture Tubes Ltd Methods for fabricating a polysilicon layer and a thin film transistor
KR100770268B1 (ko) * 2006-05-18 2007-10-25 삼성에스디아이 주식회사 박막트랜지스터의 제조방법
KR100770269B1 (ko) 2006-05-18 2007-10-25 삼성에스디아이 주식회사 박막트랜지스터의 제조방법
KR100742381B1 (ko) 2006-06-28 2007-07-24 삼성에스디아이 주식회사 박막트랜지스터의 제조방법
TW200824003A (en) * 2006-11-17 2008-06-01 Chunghwa Picture Tubes Ltd Semiconductor device and manufacturing method thereof
US20080296562A1 (en) * 2007-05-31 2008-12-04 Murduck James M Methods and apparatus for fabricating carbon nanotubes and carbon nanotube devices
WO2008156040A1 (en) * 2007-06-20 2008-12-24 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
KR100806017B1 (ko) * 2007-11-21 2008-02-26 송경진 가역성 1회용 혈관 수지침
JP5292066B2 (ja) * 2007-12-05 2013-09-18 株式会社半導体エネルギー研究所 表示装置
JP4954047B2 (ja) * 2007-12-17 2012-06-13 シャープ株式会社 半導体装置及びその製造方法
KR101393611B1 (ko) * 2009-06-02 2014-05-12 가부시키가이샤 사무코 반도체 디바이스용 반도체 기판의 제조방법, 반도체 디바이스용 반도체 기판의 제조장치, 반도체 디바이스의 제조방법 및 반도체 디바이스의 제조장치
KR102308905B1 (ko) * 2014-11-21 2021-10-06 삼성디스플레이 주식회사 박막 트랜지스터, 박막 트랜지스터의 제조 방법 및 박막 트랜지스터를 구비한 유기 발광 표시 장치

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JPH06349735A (ja) * 1993-06-12 1994-12-22 Semiconductor Energy Lab Co Ltd 半導体装置
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JP2759415B2 (ja) 1993-11-05 1998-05-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
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JP4318768B2 (ja) * 1997-07-23 2009-08-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
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