JPH1168110A - 表示装置の作製方法 - Google Patents

表示装置の作製方法

Info

Publication number
JPH1168110A
JPH1168110A JP23172497A JP23172497A JPH1168110A JP H1168110 A JPH1168110 A JP H1168110A JP 23172497 A JP23172497 A JP 23172497A JP 23172497 A JP23172497 A JP 23172497A JP H1168110 A JPH1168110 A JP H1168110A
Authority
JP
Japan
Prior art keywords
short ring
active matrix
thin film
short
matrix circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP23172497A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1168110A5 (th
Inventor
Kouyuu Chiyou
宏勇 張
Jun Koyama
潤 小山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP23172497A priority Critical patent/JPH1168110A/ja
Publication of JPH1168110A publication Critical patent/JPH1168110A/ja
Publication of JPH1168110A5 publication Critical patent/JPH1168110A5/ja
Withdrawn legal-status Critical Current

Links

Landscapes

  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
JP23172497A 1997-08-13 1997-08-13 表示装置の作製方法 Withdrawn JPH1168110A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23172497A JPH1168110A (ja) 1997-08-13 1997-08-13 表示装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23172497A JPH1168110A (ja) 1997-08-13 1997-08-13 表示装置の作製方法

Publications (2)

Publication Number Publication Date
JPH1168110A true JPH1168110A (ja) 1999-03-09
JPH1168110A5 JPH1168110A5 (th) 2005-05-12

Family

ID=16928039

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23172497A Withdrawn JPH1168110A (ja) 1997-08-13 1997-08-13 表示装置の作製方法

Country Status (1)

Country Link
JP (1) JPH1168110A (th)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6891523B2 (en) * 1998-02-19 2005-05-10 Seiko Epson Corporation Active-matrix substrate, electro-optical device, method for manufacturing active-matrix substrate, and electronic equipment
JP2005311328A (ja) * 2004-03-25 2005-11-04 Semiconductor Energy Lab Co Ltd 発光装置とその製造方法、電子機器
JP2007158004A (ja) * 2005-12-05 2007-06-21 Oki Electric Ind Co Ltd 半導体装置及びその製造方法
JP2009059497A (ja) * 2007-08-30 2009-03-19 Kyocera Corp 有機ｅｌパネルの製造方法及び有機ｅｌディスプレイの製造方法
US7619288B2 (en) 2005-05-27 2009-11-17 Sharp Kabushiki Kaisha Thin film transistor substrate, liquid crystal display device provided with such thin film transistor substrate and method for manufacturing thin film transistor substrate
US7872726B2 (en) 2008-03-07 2011-01-18 Chunghwa Picture Tubes, Ltd. Active device array mother substrate
CN101542372B (zh) 2007-02-19 2011-09-21 东芝松下显示技术有限公司 液晶盒用长条状母材、液晶盒用多单元母材、阵列基板用基板、及液晶盒的制造方法
JP2011233332A (ja) * 2010-04-27 2011-11-17 Nec Lighting Ltd 有機エレクトロルミネッセンス照明装置の製造方法
JP2012003266A (ja) * 2010-06-21 2012-01-05 Beijing Boe Optoelectronics Technology Co Ltd マザーボード及びアレイ基板の製造方法
US8198635B2 (en) 2004-03-25 2012-06-12 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, method for manufacturing thereof and electronic appliance
JP2012226195A (ja) * 2011-04-21 2012-11-15 Seiko Epson Corp 電気光学装置、電気光学装置用基板及び電子機器
CN113066803A (zh) * 2021-03-22 2021-07-02 合肥鑫晟光电科技有限公司 显示面板的制造方法、显示面板以及待切割显示面板

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02242229A (ja) * 1989-03-16 1990-09-26 Matsushita Electron Corp 液晶表示装置の製造方法
JPH06332011A (ja) * 1993-05-18 1994-12-02 Sony Corp 半導体集合基板及び半導体装置
JPH07140488A (ja) * 1993-11-17 1995-06-02 Matsushita Electric Ind Co Ltd 液晶表示パネル素材及び液晶表示パネルの製造方法
JPH07287250A (ja) * 1994-04-19 1995-10-31 Oki Electric Ind Co Ltd 多面取り薄膜トランジスタアレイ基板及びその検査方法
JPH08330594A (ja) * 1995-05-31 1996-12-13 Sony Corp 絶縁体基板の製造方法および半導体装置の製造方法
JPH09197376A (ja) * 1996-01-11 1997-07-31 Casio Comput Co Ltd 半導体素子静電対策構造

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02242229A (ja) * 1989-03-16 1990-09-26 Matsushita Electron Corp 液晶表示装置の製造方法
JPH06332011A (ja) * 1993-05-18 1994-12-02 Sony Corp 半導体集合基板及び半導体装置
JPH07140488A (ja) * 1993-11-17 1995-06-02 Matsushita Electric Ind Co Ltd 液晶表示パネル素材及び液晶表示パネルの製造方法
JPH07287250A (ja) * 1994-04-19 1995-10-31 Oki Electric Ind Co Ltd 多面取り薄膜トランジスタアレイ基板及びその検査方法
JPH08330594A (ja) * 1995-05-31 1996-12-13 Sony Corp 絶縁体基板の製造方法および半導体装置の製造方法
JPH09197376A (ja) * 1996-01-11 1997-07-31 Casio Comput Co Ltd 半導体素子静電対策構造

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6891523B2 (en) * 1998-02-19 2005-05-10 Seiko Epson Corporation Active-matrix substrate, electro-optical device, method for manufacturing active-matrix substrate, and electronic equipment
JP2005311328A (ja) * 2004-03-25 2005-11-04 Semiconductor Energy Lab Co Ltd 発光装置とその製造方法、電子機器
US8674369B2 (en) 2004-03-25 2014-03-18 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, method for manufacturing thereof and electronic appliance
US8198635B2 (en) 2004-03-25 2012-06-12 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, method for manufacturing thereof and electronic appliance
US7619288B2 (en) 2005-05-27 2009-11-17 Sharp Kabushiki Kaisha Thin film transistor substrate, liquid crystal display device provided with such thin film transistor substrate and method for manufacturing thin film transistor substrate
JP2007158004A (ja) * 2005-12-05 2007-06-21 Oki Electric Ind Co Ltd 半導体装置及びその製造方法
CN101542372B (zh) 2007-02-19 2011-09-21 东芝松下显示技术有限公司 液晶盒用长条状母材、液晶盒用多单元母材、阵列基板用基板、及液晶盒的制造方法
JP2009059497A (ja) * 2007-08-30 2009-03-19 Kyocera Corp 有機ｅｌパネルの製造方法及び有機ｅｌディスプレイの製造方法
US7872726B2 (en) 2008-03-07 2011-01-18 Chunghwa Picture Tubes, Ltd. Active device array mother substrate
JP2011233332A (ja) * 2010-04-27 2011-11-17 Nec Lighting Ltd 有機エレクトロルミネッセンス照明装置の製造方法
JP2012003266A (ja) * 2010-06-21 2012-01-05 Beijing Boe Optoelectronics Technology Co Ltd マザーボード及びアレイ基板の製造方法
US8633065B2 (en) 2010-06-21 2014-01-21 Beijing Boe Optoelectronics Technology Co., Ltd. Method for manufacturing mother substrate and array substrate
JP2012226195A (ja) * 2011-04-21 2012-11-15 Seiko Epson Corp 電気光学装置、電気光学装置用基板及び電子機器
CN113066803A (zh) * 2021-03-22 2021-07-02 合肥鑫晟光电科技有限公司 显示面板的制造方法、显示面板以及待切割显示面板
US12426363B2 (en) 2021-03-22 2025-09-23 Hefei Xinsheng Optoelectronics Technology Co., Ltd. Method for manufacturing display panel, display panel and to-be-cut display panel

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