JPS51147267A - Insulated gate type semiconductor device - Google Patents
Insulated gate type semiconductor deviceInfo
- Publication number
- JPS51147267A JPS51147267A JP50070808A JP7080875A JPS51147267A JP S51147267 A JPS51147267 A JP S51147267A JP 50070808 A JP50070808 A JP 50070808A JP 7080875 A JP7080875 A JP 7080875A JP S51147267 A JPS51147267 A JP S51147267A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- type semiconductor
- insulated gate
- gate type
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To obtain high integration and density by using the diffusion layers of a source and drain as the wiring in a Si gate CMOS IC.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50070808A JPS51147267A (en) | 1975-06-13 | 1975-06-13 | Insulated gate type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50070808A JPS51147267A (en) | 1975-06-13 | 1975-06-13 | Insulated gate type semiconductor device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57075342A Division JPS58185A (en) | 1982-05-07 | 1982-05-07 | Insulated gate type semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS51147267A true JPS51147267A (en) | 1976-12-17 |
Family
ID=13442223
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50070808A Pending JPS51147267A (en) | 1975-06-13 | 1975-06-13 | Insulated gate type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS51147267A (en) |
-
1975
- 1975-06-13 JP JP50070808A patent/JPS51147267A/en active Pending
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