JPS52154377A - Forming method for contact parts in part of shallow diffused layer - Google Patents

Forming method for contact parts in part of shallow diffused layer

Info

Publication number
JPS52154377A
JPS52154377A JP7109476A JP7109476A JPS52154377A JP S52154377 A JPS52154377 A JP S52154377A JP 7109476 A JP7109476 A JP 7109476A JP 7109476 A JP7109476 A JP 7109476A JP S52154377 A JPS52154377 A JP S52154377A
Authority
JP
Japan
Prior art keywords
diffused layer
forming method
contact parts
layer
shallow diffused
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7109476A
Other languages
Japanese (ja)
Inventor
Hiroshi Kawamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP7109476A priority Critical patent/JPS52154377A/en
Priority to DE19772726004 priority patent/DE2726004A1/en
Priority to NL7706436A priority patent/NL7706436A/en
Publication of JPS52154377A publication Critical patent/JPS52154377A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/1414—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer being silicon, silicide or SIPOS, e.g. polysilicon or porous silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials

Abstract

PURPOSE: To obtain short-channel MOSFET by forming a deep diffused layer through thermal diffusion via poly-Si layer to make the layer readily connectable to Al electrodes and forming a shallow diffused layer with easy controlling through ion implantation.
COPYRIGHT: (C)1977,JPO&Japio
JP7109476A 1976-06-18 1976-06-18 Forming method for contact parts in part of shallow diffused layer Pending JPS52154377A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP7109476A JPS52154377A (en) 1976-06-18 1976-06-18 Forming method for contact parts in part of shallow diffused layer
DE19772726004 DE2726004A1 (en) 1976-06-18 1977-06-08 Metal insulator semiconductor field effect transistor prodn. - including formation of diffused zones designed to increase switching speed (NL 20.12.77)
NL7706436A NL7706436A (en) 1976-06-18 1977-06-10 PROCEDURE FOR THE MANUFACTURE OF A SEMI-CONDUCTOR DEVICE WITH A CONTACTS ON A PART OF A SHALLOW DIFFUSION LAYER.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7109476A JPS52154377A (en) 1976-06-18 1976-06-18 Forming method for contact parts in part of shallow diffused layer

Publications (1)

Publication Number Publication Date
JPS52154377A true JPS52154377A (en) 1977-12-22

Family

ID=13450596

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7109476A Pending JPS52154377A (en) 1976-06-18 1976-06-18 Forming method for contact parts in part of shallow diffused layer

Country Status (3)

Country Link
JP (1) JPS52154377A (en)
DE (1) DE2726004A1 (en)
NL (1) NL7706436A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53110383A (en) * 1977-03-08 1978-09-27 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2912858A1 (en) * 1979-03-30 1980-10-09 Siemens Ag LOW RESISTANT PIPE

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53110383A (en) * 1977-03-08 1978-09-27 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
DE2726004A1 (en) 1977-12-22
NL7706436A (en) 1977-12-20

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