JPS5263680A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5263680A
JPS5263680A JP50139648A JP13964875A JPS5263680A JP S5263680 A JPS5263680 A JP S5263680A JP 50139648 A JP50139648 A JP 50139648A JP 13964875 A JP13964875 A JP 13964875A JP S5263680 A JPS5263680 A JP S5263680A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
photoetching
deterioration
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50139648A
Other languages
Japanese (ja)
Inventor
Toshio Sugawa
Takeshi Konuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP50139648A priority Critical patent/JPS5263680A/en
Publication of JPS5263680A publication Critical patent/JPS5263680A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To protect substrate surface from contamination owing to photoetching and prevent the deterioration in characteristics by performing impurity diffusion from the exposed gap under overhangs in the double insulation layer on the substrate.
COPYRIGHT: (C)1977,JPO&Japio
JP50139648A 1975-11-19 1975-11-19 Production of semiconductor device Pending JPS5263680A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50139648A JPS5263680A (en) 1975-11-19 1975-11-19 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50139648A JPS5263680A (en) 1975-11-19 1975-11-19 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5263680A true JPS5263680A (en) 1977-05-26

Family

ID=15250157

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50139648A Pending JPS5263680A (en) 1975-11-19 1975-11-19 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5263680A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5599722A (en) * 1979-01-26 1980-07-30 Hitachi Ltd Preparation of semiconductor device
JPS582076A (en) * 1981-06-23 1983-01-07 シ−メンス・アクチエンゲゼルシヤフト Method of producing schottky diode
JPS5884432A (en) * 1981-10-28 1983-05-20 ウエスターン・エレクトリック・カムパニー・インコーポレーテッド Method of forming submicron pattern
JPS61104662A (en) * 1984-10-26 1986-05-22 シーメンス、アクチエンゲゼルシヤフト Schottky barrier junction for semiconductor surface and manufacture thereof
US5027167A (en) * 1988-01-22 1991-06-25 The Agency Of Industrial Science And Technology Semiconductor intergrated circuit

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5599722A (en) * 1979-01-26 1980-07-30 Hitachi Ltd Preparation of semiconductor device
JPS582076A (en) * 1981-06-23 1983-01-07 シ−メンス・アクチエンゲゼルシヤフト Method of producing schottky diode
JPS5884432A (en) * 1981-10-28 1983-05-20 ウエスターン・エレクトリック・カムパニー・インコーポレーテッド Method of forming submicron pattern
JPS61104662A (en) * 1984-10-26 1986-05-22 シーメンス、アクチエンゲゼルシヤフト Schottky barrier junction for semiconductor surface and manufacture thereof
US5027167A (en) * 1988-01-22 1991-06-25 The Agency Of Industrial Science And Technology Semiconductor intergrated circuit

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