JPS5240071A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5240071A
JPS5240071A JP50115629A JP11562975A JPS5240071A JP S5240071 A JPS5240071 A JP S5240071A JP 50115629 A JP50115629 A JP 50115629A JP 11562975 A JP11562975 A JP 11562975A JP S5240071 A JPS5240071 A JP S5240071A
Authority
JP
Japan
Prior art keywords
semiconductor device
junction
vicinity
obtaining
silicon oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50115629A
Other languages
English (en)
Inventor
Koichiro Yamada
Kohei Yamada
Katsuo Sugawara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50115629A priority Critical patent/JPS5240071A/ja
Publication of JPS5240071A publication Critical patent/JPS5240071A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)
  • Bipolar Transistors (AREA)
JP50115629A 1975-09-26 1975-09-26 Semiconductor device Pending JPS5240071A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50115629A JPS5240071A (en) 1975-09-26 1975-09-26 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50115629A JPS5240071A (en) 1975-09-26 1975-09-26 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5240071A true JPS5240071A (en) 1977-03-28

Family

ID=14667369

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50115629A Pending JPS5240071A (en) 1975-09-26 1975-09-26 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5240071A (ja)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54158773A (en) * 1978-06-06 1979-12-14 Akio Nakano Press device
JPS54158771A (en) * 1978-06-06 1979-12-14 Akio Nakano Press device
JPS55143390A (en) * 1979-04-24 1980-11-08 Pioneer Electronic Corp Natural convection type radiator
US4794445A (en) * 1986-07-31 1988-12-27 Hitachi, Ltd. Semiconductor device
WO2012160961A1 (ja) * 2011-05-23 2012-11-29 新電元工業株式会社 半導体装置の製造方法及び半導体装置
JP5340511B1 (ja) * 2012-05-08 2013-11-13 新電元工業株式会社 半導体装置の製造方法及び半導体装置
JP5655139B2 (ja) * 2011-05-23 2015-01-14 新電元工業株式会社 半導体装置の製造方法及び半導体装置
JP5655140B2 (ja) * 2011-05-23 2015-01-14 新電元工業株式会社 半導体装置の製造方法及び半導体装置
US9698069B2 (en) 2012-05-08 2017-07-04 Shindengen Electric Manufacturing Co., Ltd. Glass composition for protecting semiconductor junction, method of manufacturing semiconductor device and semiconductor device
US9941112B2 (en) * 2011-05-26 2018-04-10 Shindengen Electric Manufacturing Co., Ltd Method of manufacturing semiconductor device and semiconductor device

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54158773A (en) * 1978-06-06 1979-12-14 Akio Nakano Press device
JPS54158771A (en) * 1978-06-06 1979-12-14 Akio Nakano Press device
JPS55143390A (en) * 1979-04-24 1980-11-08 Pioneer Electronic Corp Natural convection type radiator
US4794445A (en) * 1986-07-31 1988-12-27 Hitachi, Ltd. Semiconductor device
WO2012160961A1 (ja) * 2011-05-23 2012-11-29 新電元工業株式会社 半導体装置の製造方法及び半導体装置
WO2012160962A1 (ja) * 2011-05-23 2012-11-29 新電元工業株式会社 半導体装置の製造方法及び半導体装置
JP5655139B2 (ja) * 2011-05-23 2015-01-14 新電元工業株式会社 半導体装置の製造方法及び半導体装置
JP5655140B2 (ja) * 2011-05-23 2015-01-14 新電元工業株式会社 半導体装置の製造方法及び半導体装置
US9941112B2 (en) * 2011-05-26 2018-04-10 Shindengen Electric Manufacturing Co., Ltd Method of manufacturing semiconductor device and semiconductor device
JP5340511B1 (ja) * 2012-05-08 2013-11-13 新電元工業株式会社 半導体装置の製造方法及び半導体装置
WO2013168314A1 (ja) * 2012-05-08 2013-11-14 新電元工業株式会社 半導体装置の製造方法及び半導体装置
US9698069B2 (en) 2012-05-08 2017-07-04 Shindengen Electric Manufacturing Co., Ltd. Glass composition for protecting semiconductor junction, method of manufacturing semiconductor device and semiconductor device

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