JPS5240980A - Process for production of semiconductor device - Google Patents

Process for production of semiconductor device

Info

Publication number
JPS5240980A
JPS5240980A JP50117058A JP11705875A JPS5240980A JP S5240980 A JPS5240980 A JP S5240980A JP 50117058 A JP50117058 A JP 50117058A JP 11705875 A JP11705875 A JP 11705875A JP S5240980 A JPS5240980 A JP S5240980A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
epitaxial layer
interpose
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50117058A
Other languages
English (en)
Inventor
Masao Tsuruoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50117058A priority Critical patent/JPS5240980A/ja
Publication of JPS5240980A publication Critical patent/JPS5240980A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/411—PN diodes having planar bodies
JP50117058A 1975-09-27 1975-09-27 Process for production of semiconductor device Pending JPS5240980A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50117058A JPS5240980A (en) 1975-09-27 1975-09-27 Process for production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50117058A JPS5240980A (en) 1975-09-27 1975-09-27 Process for production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5240980A true JPS5240980A (en) 1977-03-30

Family

ID=14702375

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50117058A Pending JPS5240980A (en) 1975-09-27 1975-09-27 Process for production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5240980A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4883772A (en) * 1986-09-11 1989-11-28 National Semiconductor Corporation Process for making a self-aligned silicide shunt
JPH04114044U (ja) * 1991-03-25 1992-10-07 株式会社学習研究社 ハンド型の投映器

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4998585A (ja) * 1973-01-22 1974-09-18
JPS49115668A (ja) * 1973-03-06 1974-11-05

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4998585A (ja) * 1973-01-22 1974-09-18
JPS49115668A (ja) * 1973-03-06 1974-11-05

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4883772A (en) * 1986-09-11 1989-11-28 National Semiconductor Corporation Process for making a self-aligned silicide shunt
JPH04114044U (ja) * 1991-03-25 1992-10-07 株式会社学習研究社 ハンド型の投映器

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