JPS524187A - P-n conjunction type solid element - Google Patents

P-n conjunction type solid element

Info

Publication number
JPS524187A
JPS524187A JP50139749A JP13974975A JPS524187A JP S524187 A JPS524187 A JP S524187A JP 50139749 A JP50139749 A JP 50139749A JP 13974975 A JP13974975 A JP 13974975A JP S524187 A JPS524187 A JP S524187A
Authority
JP
Japan
Prior art keywords
type solid
solid element
conjunction type
conjunction
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50139749A
Other languages
Japanese (ja)
Inventor
Kiyoshi Morimoto
Yukihiko Utamura
Toshinobu Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Futaba Corp
Original Assignee
Futaba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Futaba Corp filed Critical Futaba Corp
Priority to JP50139749A priority Critical patent/JPS524187A/en
Publication of JPS524187A publication Critical patent/JPS524187A/en
Pending legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE: To form a good P-n junction of thin film by the cluster ion beam evaporation method.
COPYRIGHT: (C)1977,JPO&Japio
JP50139749A 1975-11-22 1975-11-22 P-n conjunction type solid element Pending JPS524187A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50139749A JPS524187A (en) 1975-11-22 1975-11-22 P-n conjunction type solid element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50139749A JPS524187A (en) 1975-11-22 1975-11-22 P-n conjunction type solid element

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP50079414A Division JPS524167A (en) 1975-06-27 1975-06-27 Manufacturing process of p-n junction type solid element

Publications (1)

Publication Number Publication Date
JPS524187A true JPS524187A (en) 1977-01-13

Family

ID=15252478

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50139749A Pending JPS524187A (en) 1975-11-22 1975-11-22 P-n conjunction type solid element

Country Status (1)

Country Link
JP (1) JPS524187A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5440075A (en) * 1977-09-06 1979-03-28 Futaba Denshi Kogyo Kk Compound semiconductor wafer
JPS6039820A (en) * 1983-08-12 1985-03-01 Fujitsu Ltd Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5440075A (en) * 1977-09-06 1979-03-28 Futaba Denshi Kogyo Kk Compound semiconductor wafer
JPS6039820A (en) * 1983-08-12 1985-03-01 Fujitsu Ltd Manufacture of semiconductor device

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