JPS5242078A - Insulated gate tupe field effect transistor - Google Patents

Insulated gate tupe field effect transistor

Info

Publication number
JPS5242078A
JPS5242078A JP11785575A JP11785575A JPS5242078A JP S5242078 A JPS5242078 A JP S5242078A JP 11785575 A JP11785575 A JP 11785575A JP 11785575 A JP11785575 A JP 11785575A JP S5242078 A JPS5242078 A JP S5242078A
Authority
JP
Japan
Prior art keywords
tupe
field effect
effect transistor
insulated gate
drain current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11785575A
Other languages
Japanese (ja)
Inventor
Ichiro Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanken Electric Co Ltd
Original Assignee
Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanken Electric Co Ltd filed Critical Sanken Electric Co Ltd
Priority to JP11785575A priority Critical patent/JPS5242078A/en
Publication of JPS5242078A publication Critical patent/JPS5242078A/en
Pending legal-status Critical Current

Links

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

PURPOSE: To form a multiplicity of grooves in a drain current direction and form a uniform gate insulation layer along the undulated surface thereby increasing drain current capacitance without degrading frequency characteristics, etc.
COPYRIGHT: (C)1977,JPO&Japio
JP11785575A 1975-09-30 1975-09-30 Insulated gate tupe field effect transistor Pending JPS5242078A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11785575A JPS5242078A (en) 1975-09-30 1975-09-30 Insulated gate tupe field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11785575A JPS5242078A (en) 1975-09-30 1975-09-30 Insulated gate tupe field effect transistor

Publications (1)

Publication Number Publication Date
JPS5242078A true JPS5242078A (en) 1977-04-01

Family

ID=14721950

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11785575A Pending JPS5242078A (en) 1975-09-30 1975-09-30 Insulated gate tupe field effect transistor

Country Status (1)

Country Link
JP (1) JPS5242078A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02238634A (en) * 1989-01-30 1990-09-20 Philips Gloeilampenfab:Nv field effect semiconductor device
US7799667B2 (en) 2003-06-13 2010-09-21 Denso Corporation Method for manufacturing semiconductor device with planer gate electrode and trench gate electrode

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02238634A (en) * 1989-01-30 1990-09-20 Philips Gloeilampenfab:Nv field effect semiconductor device
US7799667B2 (en) 2003-06-13 2010-09-21 Denso Corporation Method for manufacturing semiconductor device with planer gate electrode and trench gate electrode

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