JPS5244184A - Mis type semicnductor memory device and process for production of same - Google Patents

Mis type semicnductor memory device and process for production of same

Info

Publication number
JPS5244184A
JPS5244184A JP50119761A JP11976175A JPS5244184A JP S5244184 A JPS5244184 A JP S5244184A JP 50119761 A JP50119761 A JP 50119761A JP 11976175 A JP11976175 A JP 11976175A JP S5244184 A JPS5244184 A JP S5244184A
Authority
JP
Japan
Prior art keywords
semicnductor
production
same
memory device
mis type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50119761A
Other languages
Japanese (ja)
Inventor
Motofumi Masaki
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50119761A priority Critical patent/JPS5244184A/en
Publication of JPS5244184A publication Critical patent/JPS5244184A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels

Landscapes

  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To insulate between a floating gate electrode and second gate electrode by the use of an Si3N4 film thereby lowering applied voltage at the time of erasing memory.
JP50119761A 1975-10-06 1975-10-06 Mis type semicnductor memory device and process for production of same Pending JPS5244184A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50119761A JPS5244184A (en) 1975-10-06 1975-10-06 Mis type semicnductor memory device and process for production of same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50119761A JPS5244184A (en) 1975-10-06 1975-10-06 Mis type semicnductor memory device and process for production of same

Publications (1)

Publication Number Publication Date
JPS5244184A true JPS5244184A (en) 1977-04-06

Family

ID=14769509

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50119761A Pending JPS5244184A (en) 1975-10-06 1975-10-06 Mis type semicnductor memory device and process for production of same

Country Status (1)

Country Link
JP (1) JPS5244184A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54104292A (en) * 1978-02-02 1979-08-16 Nec Corp Manufacture of semiconductor device
JPS57147753A (en) * 1981-02-11 1982-09-11 Siemens Ag Microcomputer unit for quickly searching identification block

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54104292A (en) * 1978-02-02 1979-08-16 Nec Corp Manufacture of semiconductor device
JPS57147753A (en) * 1981-02-11 1982-09-11 Siemens Ag Microcomputer unit for quickly searching identification block

Similar Documents

Publication Publication Date Title
SE384761B (en) METHOD OF STABILIZATION OF THE THRESHOLD VOLTAGE AT A SILICEL CONTROL ELECTRODE - FIELD POWER TRANSISTOR DEVICE
JPS5239381A (en) Insulated gate fet transistor
GB2026239B (en) Field effect transistor with an insulated gate electrode
CA1034216A (en) Amplifier with fet having gate leakage current limitation
JPS51117838A (en) Semiconductor memory device
JPS5357771A (en) Non-volatile memory transistor
JPS5244184A (en) Mis type semicnductor memory device and process for production of same
JPS5213782A (en) Semiconductor non-vol atile memory unit
JPS5228277A (en) Non-voltatile semiconductor memory device
JPS51150284A (en) Semiconductor unvolatile memory unit
JPS5263684A (en) Non-volatile semiconductor memory device
JPS5292441A (en) Semiconductor memory unit
JPS5291383A (en) Semiconductor memory device
CA939082A (en) Method and apparatus for the electrochemical development of damage tracks produced by radiations on insulating materials
JPS52129383A (en) Mis semicnductor integrated circuit device
JPS528783A (en) Semconductor resistance devices
JPS522157A (en) Mis output circuit
JPS5279840A (en) Operation of nonvolatile semiconductor memory element
JPS538077A (en) Field effect transistor and its production
JPS5344182A (en) Semiconductor device
JPS53144688A (en) Field effect semiconductor memory device and production of the same
JPS51138175A (en) Method of manufacturing charge coupled device
JPS5258487A (en) Production of silicon gate mis type transistor
JPS51147135A (en) Non-voratile semiconductor memory
JPS51134074A (en) Method to manufacture the semiconductor unit