JPS5246762A - Method of boron diffusion of silicon - Google Patents

Method of boron diffusion of silicon

Info

Publication number
JPS5246762A
JPS5246762A JP50122815A JP12281575A JPS5246762A JP S5246762 A JPS5246762 A JP S5246762A JP 50122815 A JP50122815 A JP 50122815A JP 12281575 A JP12281575 A JP 12281575A JP S5246762 A JPS5246762 A JP S5246762A
Authority
JP
Japan
Prior art keywords
silicon
boron diffusion
diffusion
sio
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50122815A
Other languages
Japanese (ja)
Inventor
Ginjiro Kanbara
Susumu Furuike
Toshio Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP50122815A priority Critical patent/JPS5246762A/en
Publication of JPS5246762A publication Critical patent/JPS5246762A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To use a BN formed by heat treating the B2O3-SiO2 mixed film formed on a wafer in NH3 gas flow as a diffusion source thereby making the film thickness thinner and performing the diffusion at low concentration regions at higher accuracy.
COPYRIGHT: (C)1977,JPO&Japio
JP50122815A 1975-10-09 1975-10-09 Method of boron diffusion of silicon Pending JPS5246762A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50122815A JPS5246762A (en) 1975-10-09 1975-10-09 Method of boron diffusion of silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50122815A JPS5246762A (en) 1975-10-09 1975-10-09 Method of boron diffusion of silicon

Publications (1)

Publication Number Publication Date
JPS5246762A true JPS5246762A (en) 1977-04-13

Family

ID=14845311

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50122815A Pending JPS5246762A (en) 1975-10-09 1975-10-09 Method of boron diffusion of silicon

Country Status (1)

Country Link
JP (1) JPS5246762A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5275265A (en) * 1975-12-19 1977-06-24 Matsushita Electronics Corp Method of diffusing impurity to semiconductor
DE3234588A1 (en) * 1982-09-17 1984-03-22 Siemens AG, 1000 Berlin und 8000 München Solid-state source to be used for diffusion on semiconductor material
RU2475883C1 (en) * 2011-09-16 2013-02-20 Федеральное Государственное Унитарное Предприятие "Научно-Производственное Предприятие "Пульсар" Method for diffusion of boron in silicon

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5275265A (en) * 1975-12-19 1977-06-24 Matsushita Electronics Corp Method of diffusing impurity to semiconductor
DE3234588A1 (en) * 1982-09-17 1984-03-22 Siemens AG, 1000 Berlin und 8000 München Solid-state source to be used for diffusion on semiconductor material
DE3234588C2 (en) * 1982-09-17 1990-05-17 Siemens Ag, 1000 Berlin Und 8000 Muenchen, De
RU2475883C1 (en) * 2011-09-16 2013-02-20 Федеральное Государственное Унитарное Предприятие "Научно-Производственное Предприятие "Пульсар" Method for diffusion of boron in silicon

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