JPS5250174A - Negative resistance element - Google Patents

Negative resistance element

Info

Publication number
JPS5250174A
JPS5250174A JP50126526A JP12652675A JPS5250174A JP S5250174 A JPS5250174 A JP S5250174A JP 50126526 A JP50126526 A JP 50126526A JP 12652675 A JP12652675 A JP 12652675A JP S5250174 A JPS5250174 A JP S5250174A
Authority
JP
Japan
Prior art keywords
resistance element
negative resistance
selective
involving
manufactured
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50126526A
Other languages
Japanese (ja)
Inventor
Masahiro Kuwagata
Masao Yamada
Tadao Konishi
Shuji Nakada
Kenichiro Nakamura
Yorisada Kawakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP50126526A priority Critical patent/JPS5250174A/en
Publication of JPS5250174A publication Critical patent/JPS5250174A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To obtain a negative resistance element that can be manufactured by addition of one selective diffusion treatment and selective etching treatment, without involving any change in the basic production processes of conventional bi-polar type transistors.
COPYRIGHT: (C)1977,JPO&Japio
JP50126526A 1975-10-20 1975-10-20 Negative resistance element Pending JPS5250174A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50126526A JPS5250174A (en) 1975-10-20 1975-10-20 Negative resistance element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50126526A JPS5250174A (en) 1975-10-20 1975-10-20 Negative resistance element

Publications (1)

Publication Number Publication Date
JPS5250174A true JPS5250174A (en) 1977-04-21

Family

ID=14937376

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50126526A Pending JPS5250174A (en) 1975-10-20 1975-10-20 Negative resistance element

Country Status (1)

Country Link
JP (1) JPS5250174A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0582534A (en) * 1991-09-24 1993-04-02 Nec Yamagata Ltd Semiconductor device
US6639300B2 (en) 2000-03-24 2003-10-28 Fujitsu Quantum Devices Limited Semiconductor integrated circuit having an integrated resistance region

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3087099A (en) * 1959-01-02 1963-04-23 Sprague Electric Co Narrow web mesa transistor structure
JPS4953781A (en) * 1972-09-28 1974-05-24
JPS5057386A (en) * 1973-09-12 1975-05-19

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3087099A (en) * 1959-01-02 1963-04-23 Sprague Electric Co Narrow web mesa transistor structure
JPS4953781A (en) * 1972-09-28 1974-05-24
JPS5057386A (en) * 1973-09-12 1975-05-19

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0582534A (en) * 1991-09-24 1993-04-02 Nec Yamagata Ltd Semiconductor device
US6639300B2 (en) 2000-03-24 2003-10-28 Fujitsu Quantum Devices Limited Semiconductor integrated circuit having an integrated resistance region

Similar Documents

Publication Publication Date Title
JPS5250174A (en) Negative resistance element
JPS51118395A (en) Semiconductor emitting unit and manufacturing process
JPS51139263A (en) Method of selective oxidation of silicon substrate
JPS529379A (en) Semiconductor device manufacturing process
JPS5249991A (en) Sputtering method
JPS5317081A (en) Production of i2l device
JPS51140065A (en) Change gear
JPS5272586A (en) Production of semiconductor device
JPS51123076A (en) The manufacturing process of field effect transistor
JPS5274280A (en) Semiconductor device and its production
JPS51119586A (en) Method of manufacturing porous blades
JPS533779A (en) Production of junction type field effect transistor
JPS52179A (en) Method of fabricating semiconductor
JPS5210084A (en) Dual directional negative resistance semiconductor device
JPS5250690A (en) Etching process
JPS51123557A (en) Impurity concentration measurement mask of semiconductor base
JPS52154343A (en) Production of semiconductor device
JPS51147252A (en) Manufacturing process of semiconductor device
JPS5244554A (en) Timer circuit
JPS5230379A (en) Process of semiconductor device
JPS5240986A (en) Process for production of semiconductor element
JPS5377168A (en) Production of semiconductor device
JPS5260083A (en) Production of semiconductor device
JPS5223279A (en) Bilateral semiconductor negative resistance element
JPS5436181A (en) Manufacture for semiconductor device