JPS5253680A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5253680A JPS5253680A JP50129686A JP12968675A JPS5253680A JP S5253680 A JPS5253680 A JP S5253680A JP 50129686 A JP50129686 A JP 50129686A JP 12968675 A JP12968675 A JP 12968675A JP S5253680 A JPS5253680 A JP S5253680A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- increased
- achieve
- size
- doped layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To achieve the increased fineness in size and the increased density of a semiconductor device by using an impurity doped layer of a small diffusion coefficient as one of multilayer wiring layers on the surface of a semiconductor substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50129686A JPS5253680A (en) | 1975-10-28 | 1975-10-28 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50129686A JPS5253680A (en) | 1975-10-28 | 1975-10-28 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5253680A true JPS5253680A (en) | 1977-04-30 |
Family
ID=15015664
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50129686A Pending JPS5253680A (en) | 1975-10-28 | 1975-10-28 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5253680A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5664461A (en) * | 1979-09-05 | 1981-06-01 | Texas Instruments Inc | Semiconductor device and method of manufacturing same |
| JPS6170740A (en) * | 1984-09-14 | 1986-04-11 | Matsushita Electronics Corp | Manufacture of semiconductor device |
-
1975
- 1975-10-28 JP JP50129686A patent/JPS5253680A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5664461A (en) * | 1979-09-05 | 1981-06-01 | Texas Instruments Inc | Semiconductor device and method of manufacturing same |
| JPS6170740A (en) * | 1984-09-14 | 1986-04-11 | Matsushita Electronics Corp | Manufacture of semiconductor device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |