JPS5351981A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS5351981A
JPS5351981A JP12695976A JP12695976A JPS5351981A JP S5351981 A JPS5351981 A JP S5351981A JP 12695976 A JP12695976 A JP 12695976A JP 12695976 A JP12695976 A JP 12695976A JP S5351981 A JPS5351981 A JP S5351981A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
substrate
layer
injuring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12695976A
Other languages
Japanese (ja)
Other versions
JPS6118871B2 (en
Inventor
Hideo Sei
Isao Arakawa
Yoshihiro Miyamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP12695976A priority Critical patent/JPS5351981A/en
Publication of JPS5351981A publication Critical patent/JPS5351981A/en
Publication of JPS6118871B2 publication Critical patent/JPS6118871B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To manufacture duplicated insulating layers on the substrate and to manufacture the impurity added layer without injuring the flatness of the substrate surface from the second layer opening part.
JP12695976A 1976-10-21 1976-10-21 Manufacture for semiconductor device Granted JPS5351981A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12695976A JPS5351981A (en) 1976-10-21 1976-10-21 Manufacture for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12695976A JPS5351981A (en) 1976-10-21 1976-10-21 Manufacture for semiconductor device

Publications (2)

Publication Number Publication Date
JPS5351981A true JPS5351981A (en) 1978-05-11
JPS6118871B2 JPS6118871B2 (en) 1986-05-14

Family

ID=14948122

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12695976A Granted JPS5351981A (en) 1976-10-21 1976-10-21 Manufacture for semiconductor device

Country Status (1)

Country Link
JP (1) JPS5351981A (en)

Also Published As

Publication number Publication date
JPS6118871B2 (en) 1986-05-14

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