JPS5283070A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5283070A
JPS5283070A JP15917675A JP15917675A JPS5283070A JP S5283070 A JPS5283070 A JP S5283070A JP 15917675 A JP15917675 A JP 15917675A JP 15917675 A JP15917675 A JP 15917675A JP S5283070 A JPS5283070 A JP S5283070A
Authority
JP
Japan
Prior art keywords
production
semiconductor device
type
layer
laminating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15917675A
Other languages
Japanese (ja)
Inventor
Kojiro Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments and Electronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments and Electronics Ltd filed Critical Seiko Instruments and Electronics Ltd
Priority to JP15917675A priority Critical patent/JPS5283070A/en
Publication of JPS5283070A publication Critical patent/JPS5283070A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS

Landscapes

  • Lasers (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To provide produce semiconductor devices of high scale of integration by laminating a P type layer on an type substrate and connecting active elements formed on the P type and layer surface through conductive through-holes.
JP15917675A 1975-12-29 1975-12-29 Production of semiconductor device Pending JPS5283070A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15917675A JPS5283070A (en) 1975-12-29 1975-12-29 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15917675A JPS5283070A (en) 1975-12-29 1975-12-29 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5283070A true JPS5283070A (en) 1977-07-11

Family

ID=15687947

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15917675A Pending JPS5283070A (en) 1975-12-29 1975-12-29 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5283070A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS582059A (en) * 1981-06-26 1983-01-07 Nec Corp Integrated circuit
JPS5817636A (en) * 1981-07-23 1983-02-01 Nec Home Electronics Ltd Manufacture of semiconductor device
JPS6052048A (en) * 1983-06-27 1985-03-23 テレタイプ　コ−ポレ−シヨン Method of producing integrated circuit device
JPS6052046A (en) * 1983-06-27 1985-03-23 テレタイプ　コ−ポレ−シヨン Method of producing integrated circuit device
JPS6052047A (en) * 1983-06-27 1985-03-23 テレタイプ　コ−ポレ−シヨン Method of producing integrated circuit device
JPS6074432A (en) * 1983-09-29 1985-04-26 Nec Corp Manufacture of semiconductor device
JPS63278368A (en) * 1987-05-11 1988-11-16 Nec Corp Forming method for viahole of semiconductor substrate

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS582059A (en) * 1981-06-26 1983-01-07 Nec Corp Integrated circuit
JPS5817636A (en) * 1981-07-23 1983-02-01 Nec Home Electronics Ltd Manufacture of semiconductor device
JPS6052048A (en) * 1983-06-27 1985-03-23 テレタイプ　コ−ポレ−シヨン Method of producing integrated circuit device
JPS6052046A (en) * 1983-06-27 1985-03-23 テレタイプ　コ−ポレ−シヨン Method of producing integrated circuit device
JPS6052047A (en) * 1983-06-27 1985-03-23 テレタイプ　コ−ポレ−シヨン Method of producing integrated circuit device
JPS6074432A (en) * 1983-09-29 1985-04-26 Nec Corp Manufacture of semiconductor device
JPS63278368A (en) * 1987-05-11 1988-11-16 Nec Corp Forming method for viahole of semiconductor substrate

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