JPS5257097A - Method for fabrication of gallium arsenide having steep distribution o f impurity concentration - Google Patents

Method for fabrication of gallium arsenide having steep distribution o f impurity concentration

Info

Publication number
JPS5257097A
JPS5257097A JP13352675A JP13352675A JPS5257097A JP S5257097 A JPS5257097 A JP S5257097A JP 13352675 A JP13352675 A JP 13352675A JP 13352675 A JP13352675 A JP 13352675A JP S5257097 A JPS5257097 A JP S5257097A
Authority
JP
Japan
Prior art keywords
impurity concentration
fabrication
gallium arsenide
steep distribution
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13352675A
Other languages
Japanese (ja)
Other versions
JPS5824399B2 (en
Inventor
Osamu Mizuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13352675A priority Critical patent/JPS5824399B2/en
Publication of JPS5257097A publication Critical patent/JPS5257097A/en
Publication of JPS5824399B2 publication Critical patent/JPS5824399B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Inorganic Compounds Of Heavy Metals (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To fabricate GaAs crystal having steep distribution of impurity concentration in the crystal by growing it on the substrate of seed crystal, which is moved between two separate and specified regions in the furnace for crystal growth, in H2 containing etching gas and impurity.
COPYRIGHT: (C)1977,JPO&Japio
JP13352675A 1975-11-05 1975-11-05 It's difficult to see how the gallium is growing. Expired JPS5824399B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13352675A JPS5824399B2 (en) 1975-11-05 1975-11-05 It's difficult to see how the gallium is growing.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13352675A JPS5824399B2 (en) 1975-11-05 1975-11-05 It's difficult to see how the gallium is growing.

Publications (2)

Publication Number Publication Date
JPS5257097A true JPS5257097A (en) 1977-05-11
JPS5824399B2 JPS5824399B2 (en) 1983-05-20

Family

ID=15106840

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13352675A Expired JPS5824399B2 (en) 1975-11-05 1975-11-05 It's difficult to see how the gallium is growing.

Country Status (1)

Country Link
JP (1) JPS5824399B2 (en)

Also Published As

Publication number Publication date
JPS5824399B2 (en) 1983-05-20

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