JPS5258380A - Counter circuit device of field effect transistor and gunn effect elem ent - Google Patents
Counter circuit device of field effect transistor and gunn effect elem entInfo
- Publication number
- JPS5258380A JPS5258380A JP50134392A JP13439275A JPS5258380A JP S5258380 A JPS5258380 A JP S5258380A JP 50134392 A JP50134392 A JP 50134392A JP 13439275 A JP13439275 A JP 13439275A JP S5258380 A JPS5258380 A JP S5258380A
- Authority
- JP
- Japan
- Prior art keywords
- circuit device
- counter circuit
- gunn
- field effect
- effect transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To control a Gunn element with a slight gate voltage by selecting the formation of gate electrode of FET in a counter circuit device of FET and Gunn element.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50134392A JPS5258380A (en) | 1975-11-08 | 1975-11-08 | Counter circuit device of field effect transistor and gunn effect elem ent |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50134392A JPS5258380A (en) | 1975-11-08 | 1975-11-08 | Counter circuit device of field effect transistor and gunn effect elem ent |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5258380A true JPS5258380A (en) | 1977-05-13 |
Family
ID=15127318
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50134392A Pending JPS5258380A (en) | 1975-11-08 | 1975-11-08 | Counter circuit device of field effect transistor and gunn effect elem ent |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5258380A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5256579A (en) * | 1989-04-03 | 1993-10-26 | Massachusetts Institute Of Technology | Tunable-frequency Gunn diodes fabrication with focused ion beams |
-
1975
- 1975-11-08 JP JP50134392A patent/JPS5258380A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5256579A (en) * | 1989-04-03 | 1993-10-26 | Massachusetts Institute Of Technology | Tunable-frequency Gunn diodes fabrication with focused ion beams |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5279679A (en) | Semiconductor memory device | |
| JPS51150285A (en) | Transistor switch device | |
| JPS5365078A (en) | Production of junction type field effect transistor | |
| JPS5267982A (en) | Manufacture of schottky barrier type field effect transistor | |
| JPS5384570A (en) | Field effect semiconductor device and its manufacture | |
| JPS5245280A (en) | Field effect transistor of schottky barrier type | |
| JPS53143177A (en) | Production of field effect transistor | |
| JPS5273681A (en) | Field effect transistor | |
| JPS5258381A (en) | Counter circuit device of dual field effect transistor and gunn effect element | |
| JPS5378782A (en) | Transmission characteristic variable mos semiconductor device | |
| JPS51147972A (en) | Insulated gate field effect semiconductor device | |
| JPS5371573A (en) | Field effect transistor of isolating gate type | |
| JPS5358780A (en) | Field effect type transistor | |
| JPS547149A (en) | Constant current circuit | |
| JPS52100877A (en) | Field effect transistor of junction type | |
| JPS5279881A (en) | Production of gaas schottky barrier gate type field effect transistor | |
| JPS5368986A (en) | Mos type transistor | |
| JPS5310980A (en) | Production of field effect transistor | |
| JPS5229178A (en) | Vertical field effect semiconductive device | |
| JPS5378785A (en) | Field effect transistor | |
| JPS5365081A (en) | Field effect semiconductor device | |
| JPS51147275A (en) | Manufacturing process of field effect transistor | |
| JPS5354485A (en) | Mos type field effect transistor | |
| JPS5272185A (en) | Two-gate type field effect transistor | |
| JPS53120159A (en) | Voltage clamp circuit |