JPS5272185A - Two-gate type field effect transistor - Google Patents

Two-gate type field effect transistor

Info

Publication number
JPS5272185A
JPS5272185A JP50148710A JP14871075A JPS5272185A JP S5272185 A JPS5272185 A JP S5272185A JP 50148710 A JP50148710 A JP 50148710A JP 14871075 A JP14871075 A JP 14871075A JP S5272185 A JPS5272185 A JP S5272185A
Authority
JP
Japan
Prior art keywords
gate type
field effect
effect transistor
type field
varying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50148710A
Other languages
Japanese (ja)
Inventor
Atsushi Nagashima
Shotaro Umebachi
Morio Inoue
Kota Kano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP50148710A priority Critical patent/JPS5272185A/en
Publication of JPS5272185A publication Critical patent/JPS5272185A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To produce a two-gate type GaAsFET of varying pinch-off voltages by varying the structure of gate electrodes so that the internal potential may vary in relation to an n type GaAs of a uniform thickness.
COPYRIGHT: (C)1977,JPO&Japio
JP50148710A 1975-12-12 1975-12-12 Two-gate type field effect transistor Pending JPS5272185A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50148710A JPS5272185A (en) 1975-12-12 1975-12-12 Two-gate type field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50148710A JPS5272185A (en) 1975-12-12 1975-12-12 Two-gate type field effect transistor

Publications (1)

Publication Number Publication Date
JPS5272185A true JPS5272185A (en) 1977-06-16

Family

ID=15458855

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50148710A Pending JPS5272185A (en) 1975-12-12 1975-12-12 Two-gate type field effect transistor

Country Status (1)

Country Link
JP (1) JPS5272185A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008062800A1 (en) * 2006-11-20 2008-05-29 Panasonic Corporation Semiconductor device and its drive method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS509378A (en) * 1973-05-23 1975-01-30

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS509378A (en) * 1973-05-23 1975-01-30

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008062800A1 (en) * 2006-11-20 2008-05-29 Panasonic Corporation Semiconductor device and its drive method
US8203376B2 (en) 2006-11-20 2012-06-19 Panasonic Corporation Semiconductor device and method for driving the same
USRE45989E1 (en) 2006-11-20 2016-04-26 Panasonic Corporation Semiconductor device and method for driving the same

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