JPS5263690A - Semiconductor integrated circuit device and its production - Google Patents

Semiconductor integrated circuit device and its production

Info

Publication number
JPS5263690A
JPS5263690A JP50139646A JP13964675A JPS5263690A JP S5263690 A JPS5263690 A JP S5263690A JP 50139646 A JP50139646 A JP 50139646A JP 13964675 A JP13964675 A JP 13964675A JP S5263690 A JPS5263690 A JP S5263690A
Authority
JP
Japan
Prior art keywords
production
integrated circuit
semiconductor integrated
circuit device
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50139646A
Other languages
Japanese (ja)
Inventor
Haruyasu Yamada
Toyoki Takemoto
Atsushi Shibata
Tsutomu Fujita
Toshiki Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP50139646A priority Critical patent/JPS5263690A/en
Publication of JPS5263690A publication Critical patent/JPS5263690A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic
    • H10D84/658—Integrated injection logic integrated in combination with analog structures

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To increase the current amplification factor of an injector transistor by making the depth or surface concentration of the injector layer of an I<2>L element higher than that of the base layer of the vertical transistor of the I<2>L element, in an IC including the I<2>L element and bipolar transistor.
JP50139646A 1975-11-19 1975-11-19 Semiconductor integrated circuit device and its production Pending JPS5263690A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50139646A JPS5263690A (en) 1975-11-19 1975-11-19 Semiconductor integrated circuit device and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50139646A JPS5263690A (en) 1975-11-19 1975-11-19 Semiconductor integrated circuit device and its production

Publications (1)

Publication Number Publication Date
JPS5263690A true JPS5263690A (en) 1977-05-26

Family

ID=15250112

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50139646A Pending JPS5263690A (en) 1975-11-19 1975-11-19 Semiconductor integrated circuit device and its production

Country Status (1)

Country Link
JP (1) JPS5263690A (en)

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