JPS5280782A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5280782A
JPS5280782A JP50156973A JP15697375A JPS5280782A JP S5280782 A JPS5280782 A JP S5280782A JP 50156973 A JP50156973 A JP 50156973A JP 15697375 A JP15697375 A JP 15697375A JP S5280782 A JPS5280782 A JP S5280782A
Authority
JP
Japan
Prior art keywords
semiconductor device
type
junctions
laminating
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50156973A
Other languages
Japanese (ja)
Inventor
Takeshi Matsushita
Takayoshi Mamine
Osamu Yoneyama
Hisayoshi Yamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP50156973A priority Critical patent/JPS5280782A/en
Publication of JPS5280782A publication Critical patent/JPS5280782A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To produce a semiconductor device good characteristics by laminating P type and N type thin films to provide thinner thickness to the depletion layer diffused at the potential for sealing PN junctions.
JP50156973A 1975-12-27 1975-12-27 Semiconductor device Pending JPS5280782A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50156973A JPS5280782A (en) 1975-12-27 1975-12-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50156973A JPS5280782A (en) 1975-12-27 1975-12-27 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5280782A true JPS5280782A (en) 1977-07-06

Family

ID=15639365

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50156973A Pending JPS5280782A (en) 1975-12-27 1975-12-27 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5280782A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5438776A (en) * 1977-08-31 1979-03-23 Ibm Fet

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5438776A (en) * 1977-08-31 1979-03-23 Ibm Fet

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