JPS5285432A - Write-in read-out-only semiconductor memory - Google Patents

Write-in read-out-only semiconductor memory

Info

Publication number
JPS5285432A
JPS5285432A JP169276A JP169276A JPS5285432A JP S5285432 A JPS5285432 A JP S5285432A JP 169276 A JP169276 A JP 169276A JP 169276 A JP169276 A JP 169276A JP S5285432 A JPS5285432 A JP S5285432A
Authority
JP
Japan
Prior art keywords
write
read
semiconductor memory
writing
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP169276A
Other languages
Japanese (ja)
Other versions
JPS5653835B2 (en
Inventor
Tsunetaka Sudo
Kuniyasu Kawarada
Katsuji Horiguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP169276A priority Critical patent/JPS5285432A/en
Publication of JPS5285432A publication Critical patent/JPS5285432A/en
Publication of JPS5653835B2 publication Critical patent/JPS5653835B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Read Only Memory (AREA)

Abstract

PURPOSE: To decrease temperature for writing amd, at the same time, to shorten continuous writing time by making a memory portion of a write-in, read-outonly semiconductor memory device as an amorphous semiconductor layer and by polycrystallizing the said layer by writing circuit.
COPYRIGHT: (C)1977,JPO&Japio
JP169276A 1976-01-08 1976-01-08 Write-in read-out-only semiconductor memory Granted JPS5285432A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP169276A JPS5285432A (en) 1976-01-08 1976-01-08 Write-in read-out-only semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP169276A JPS5285432A (en) 1976-01-08 1976-01-08 Write-in read-out-only semiconductor memory

Publications (2)

Publication Number Publication Date
JPS5285432A true JPS5285432A (en) 1977-07-15
JPS5653835B2 JPS5653835B2 (en) 1981-12-22

Family

ID=11508567

Family Applications (1)

Application Number Title Priority Date Filing Date
JP169276A Granted JPS5285432A (en) 1976-01-08 1976-01-08 Write-in read-out-only semiconductor memory

Country Status (1)

Country Link
JP (1) JPS5285432A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7506779B2 (en) 2005-07-01 2009-03-24 Ball Corporation Method and apparatus for forming a reinforcing bead in a container end closure

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4940114A (en) * 1972-08-16 1974-04-15
JPS5019912A (en) * 1973-06-30 1975-03-03

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4940114A (en) * 1972-08-16 1974-04-15
JPS5019912A (en) * 1973-06-30 1975-03-03

Also Published As

Publication number Publication date
JPS5653835B2 (en) 1981-12-22

Similar Documents

Publication Publication Date Title
JPS5387681A (en) Semiconductor memory device
JPS52149933A (en) Pulse generator using memory unit
JPS53128285A (en) Semiconductor device and production of the same
JPS53120383A (en) Production of semiconductor device
JPS5368182A (en) Production of semiconductor memory device
JPS52109369A (en) Manufacture of semiconductor device
JPS5289480A (en) Semiconductive nonvoltile memory device
JPS51140520A (en) High speed write device
JPS52124825A (en) High performance memory circuit
JPS52153383A (en) Preparation of semiconductor device
JPS51118965A (en) Insulation film of semiconductor device
JPS5348475A (en) Production of semiconductor device
JPS5354325A (en) Combustion control device
JPS52119875A (en) Formation of isolation area
JPS5338991A (en) Semiconductor device
JPS5287359A (en) Production of semiconductor device
JPS5424574A (en) Manufacture for semiconductor device
JPS5358737A (en) Optical recording/reproducing device
JPS51112266A (en) Semiconductor device production method
JPS5351964A (en) Selective growth method for semiconductor crystal
JPS52154343A (en) Production of semiconductor device
JPS53142168A (en) Reproductive use of semiconductor substrate
JPS5323527A (en) Magnetic domain memory unit
JPS5345989A (en) Manufacture of semiconductor memory device
JPS5396761A (en) Production of semiconductor device