JPS51116682A - Field effect transistor of high dielectric strength - Google Patents

Field effect transistor of high dielectric strength

Info

Publication number
JPS51116682A
JPS51116682A JP4133875A JP4133875A JPS51116682A JP S51116682 A JPS51116682 A JP S51116682A JP 4133875 A JP4133875 A JP 4133875A JP 4133875 A JP4133875 A JP 4133875A JP S51116682 A JPS51116682 A JP S51116682A
Authority
JP
Japan
Prior art keywords
dielectric strength
field effect
effect transistor
high dielectric
back surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4133875A
Other languages
Japanese (ja)
Inventor
Isao Yoshida
Takashi Tokuyama
Shikayuki Ochi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP4133875A priority Critical patent/JPS51116682A/en
Publication of JPS51116682A publication Critical patent/JPS51116682A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To heighten a drain dielectric strength of a MOSFET transistor by covering a back surface opposite to a drain area with an insulating film and by controlling the inpurity concentration and the thickness of a sabstrate until a depletion layer in a bulk reaches the back surface.
COPYRIGHT: (C)1976,JPO&Japio
JP4133875A 1975-04-07 1975-04-07 Field effect transistor of high dielectric strength Pending JPS51116682A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4133875A JPS51116682A (en) 1975-04-07 1975-04-07 Field effect transistor of high dielectric strength

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4133875A JPS51116682A (en) 1975-04-07 1975-04-07 Field effect transistor of high dielectric strength

Publications (1)

Publication Number Publication Date
JPS51116682A true JPS51116682A (en) 1976-10-14

Family

ID=12605722

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4133875A Pending JPS51116682A (en) 1975-04-07 1975-04-07 Field effect transistor of high dielectric strength

Country Status (1)

Country Link
JP (1) JPS51116682A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5610773U (en) * 1979-07-04 1981-01-29
JPS5615075A (en) * 1979-07-19 1981-02-13 Pioneer Electronic Corp Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5610773U (en) * 1979-07-04 1981-01-29
JPS5615075A (en) * 1979-07-19 1981-02-13 Pioneer Electronic Corp Semiconductor device

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