JPS5366187A - Semiconductor ingegrated circuit device and its production - Google Patents

Semiconductor ingegrated circuit device and its production

Info

Publication number: JPS5366187A
Authority: JP; Japan
Prior art keywords: ingegrated; semiconductor; production; circuit device; transistors
Prior art date: 1976-11-26
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Pending

Application number

JP14127576A

Other languages

English (en)

Inventor

Seiichi Jo

Kazuo Yamazaki

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Hitachi Ltd

Original Assignee

Hitachi Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1976-11-26

Filing date

1976-11-26

Publication date

1978-06-13

1976-11-26 Application filed by Hitachi Ltd filed Critical Hitachi Ltd

1976-11-26 Priority to JP14127576A priority Critical patent/JPS5366187A/ja

1978-06-13 Publication of JPS5366187A publication Critical patent/JPS5366187A/ja

Status Pending legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title 1
230000003321 amplification Effects 0.000 abstract 1
238000003199 nucleic acid amplification method Methods 0.000 abstract 1

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/65—Integrated injection logic
- H10D84/658—Integrated injection logic integrated in combination with analog structures

Landscapes

Bipolar Transistors (AREA)
Bipolar Integrated Circuits (AREA)

JP14127576A 1976-11-26 1976-11-26 Semiconductor ingegrated circuit device and its production Pending JPS5366187A (en)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP14127576A JPS5366187A (en)	1976-11-26	1976-11-26	Semiconductor ingegrated circuit device and its production

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP14127576A JPS5366187A (en)	1976-11-26	1976-11-26	Semiconductor ingegrated circuit device and its production

Publications (1)

Publication Number	Publication Date
JPS5366187A true JPS5366187A (en)	1978-06-13

Family

ID=15288092

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP14127576A Pending JPS5366187A (en)	1976-11-26	1976-11-26	Semiconductor ingegrated circuit device and its production

Country Status (1)

Country	Link
JP (1)	JPS5366187A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5066602A (en) *	1982-04-19	1991-11-19	Matsushita Electric Industrial Co., Ltd.	Method of making semiconductor ic including polar transistors

1976
- 1976-11-26 JP JP14127576A patent/JPS5366187A/ja active Pending

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5066602A (en) *	1982-04-19	1991-11-19	Matsushita Electric Industrial Co., Ltd.	Method of making semiconductor ic including polar transistors

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