JPS5372480A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5372480A
JPS5372480A JP14816876A JP14816876A JPS5372480A JP S5372480 A JPS5372480 A JP S5372480A JP 14816876 A JP14816876 A JP 14816876A JP 14816876 A JP14816876 A JP 14816876A JP S5372480 A JPS5372480 A JP S5372480A
Authority
JP
Japan
Prior art keywords
domain
semiconductor device
hfe
iil
recombination
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14816876A
Other languages
Japanese (ja)
Inventor
Susumu Hirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP14816876A priority Critical patent/JPS5372480A/en
Publication of JPS5372480A publication Critical patent/JPS5372480A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/65—Integrated injection logic

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To increase the high frequency performance and hFE for IIL, by taking the operating domain only for the domain between the emitter of transistor and the base domain opposing to the collector domain and by avoiding the accumulation of charge and recombination.
JP14816876A 1976-12-09 1976-12-09 Semiconductor device Pending JPS5372480A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14816876A JPS5372480A (en) 1976-12-09 1976-12-09 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14816876A JPS5372480A (en) 1976-12-09 1976-12-09 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5372480A true JPS5372480A (en) 1978-06-27

Family

ID=15446760

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14816876A Pending JPS5372480A (en) 1976-12-09 1976-12-09 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5372480A (en)

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