JPS54155771A - Pattern forming method - Google Patents

Pattern forming method

Info

Publication number: JPS54155771A
Authority: JP; Japan
Prior art keywords: layer; pattern; interval; etching; etched
Prior art date: 1978-05-29
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP6466878A

Other languages

English (en)

Japanese (ja)

Other versions

JPS6326536B2 (lt

Inventor

Yoshimasa Kato

Hiroshi Gokan

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

NEC Corp

Original Assignee

NEC Corp

Nippon Electric Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1978-05-29

Filing date

1978-05-29

Publication date

1979-12-08

1978-05-29 Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp

1978-05-29 Priority to JP6466878A priority Critical patent/JPS54155771A/ja

1979-12-08 Publication of JPS54155771A publication Critical patent/JPS54155771A/ja

1988-05-30 Publication of JPS6326536B2 publication Critical patent/JPS6326536B2/ja

Status Granted legal-status Critical Current

Links

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
- H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
- H10P76/4083—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by their behaviours during the lithography processes, e.g. soluble masks or redeposited masks

Landscapes

Drying Of Semiconductors (AREA)

JP6466878A 1978-05-29 1978-05-29 Pattern forming method Granted JPS54155771A (en)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP6466878A JPS54155771A (en)	1978-05-29	1978-05-29	Pattern forming method

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP6466878A JPS54155771A (en)	1978-05-29	1978-05-29	Pattern forming method

Publications (2)

Publication Number	Publication Date
JPS54155771A true JPS54155771A (en)	1979-12-08
JPS6326536B2 JPS6326536B2 (lt)	1988-05-30

Family

ID=13264792

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP6466878A Granted JPS54155771A (en)	1978-05-29	1978-05-29	Pattern forming method

Country Status (1)

Country	Link
JP (1)	JPS54155771A (lt)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS56130926A (en) *	1980-03-18	1981-10-14	Nec Corp	Forming method of mask pattern
JPS57145377A (en) *	1981-03-03	1982-09-08	Nec Corp	Manufacture of schottky barrier type field effect transistor
JP2007227934A (ja) *	2006-02-24	2007-09-06	Hynix Semiconductor Inc	半導体素子の微細パターン形成方法及び基板用パターン形成方法
US7745339B2 (en)	2006-02-24	2010-06-29	Hynix Semiconductor Inc.	Method for forming fine pattern of semiconductor device
US7754591B2 (en)	2006-02-24	2010-07-13	Hynix Semiconductor Inc.	Method for forming fine pattern of semiconductor device
US20220189772A1 (en) *	2020-12-15	2022-06-16	Applied Materials, Inc.	Directional modification of patterning structure to enhance pattern elongation process margin

Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5324277A (en) *	1976-08-18	1978-03-06	Nec Corp	Semiconductor devic e and its production

1978
- 1978-05-29 JP JP6466878A patent/JPS54155771A/ja active Granted

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5324277A (en) *	1976-08-18	1978-03-06	Nec Corp	Semiconductor devic e and its production

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS56130926A (en) *	1980-03-18	1981-10-14	Nec Corp	Forming method of mask pattern
JPS57145377A (en) *	1981-03-03	1982-09-08	Nec Corp	Manufacture of schottky barrier type field effect transistor
JP2007227934A (ja) *	2006-02-24	2007-09-06	Hynix Semiconductor Inc	半導体素子の微細パターン形成方法及び基板用パターン形成方法
US7745339B2 (en)	2006-02-24	2010-06-29	Hynix Semiconductor Inc.	Method for forming fine pattern of semiconductor device
US7754591B2 (en)	2006-02-24	2010-07-13	Hynix Semiconductor Inc.	Method for forming fine pattern of semiconductor device
US20220189772A1 (en) *	2020-12-15	2022-06-16	Applied Materials, Inc.	Directional modification of patterning structure to enhance pattern elongation process margin
US11984318B2 (en) *	2020-12-15	2024-05-14	Applied Materials, Inc.	Directional modification of patterning structure to enhance pattern elongation process margin

Also Published As

Publication number	Publication date
JPS6326536B2 (lt)	1988-05-30

Similar Documents

Publication	Publication Date	Title
EP0095209A3 (en)	1985-05-15	Method of forming a resist mask resistant to plasma etching
JPS54155771A (en)	1979-12-08	Pattern forming method
US4362598A (en)	1982-12-07	Method of patterning a thick resist layer of polymeric plastic
JPS5797626A (en)	1982-06-17	Manufacture of semiconductor device
JPS5710249A (en)	1982-01-19	Manufacture of semiconductor device
JPS6459936A (en)	1989-03-07	Manufacture of integrated circuit
JPS5710989A (en)	1982-01-20	Pattern manufacture for jusephson-junction element
JPS57198632A (en)	1982-12-06	Fine pattern formation
JPS5568655A (en)	1980-05-23	Manufacturing method of wiring
JPS55138839A (en)	1980-10-30	Method of fabricating semiconductor device
JPS56130751A (en)	1981-10-13	Manufacture of mask
JPS5743425A (en)	1982-03-11	Forming method for fine pattern
JPS56115534A (en)	1981-09-10	Formation of pattern
JPS5772331A (en)	1982-05-06	Manufacture of semiconductor device
JPS54162460A (en)	1979-12-24	Electrode forming method
JPS5596654A (en)	1980-07-23	Method of fabricating semiconductor device
JPS5732375A (en)	1982-02-22	Etching method for thin film
JPS5797629A (en)	1982-06-17	Manufacture of semiconductor device
JPS5612736A (en)	1981-02-07	Formation of fine chromium pattern
JPS5619054A (en)	1981-02-23	Metal photomask
JPS57141938A (en)	1982-09-02	Manufacture of semiconductor device
JPS56157026A (en)	1981-12-04	Formation of pattern
JPS5735860A (en)	1982-02-26	Preparation of photomask
JPS5539691A (en)	1980-03-19	Fabrication of fine pattern
JPS5646230A (en)	1981-04-27	Exposing method