JPS54162467A - Semiconductor element - Google Patents

Semiconductor element

Info

Publication number
JPS54162467A
JPS54162467A JP7174978A JP7174978A JPS54162467A JP S54162467 A JPS54162467 A JP S54162467A JP 7174978 A JP7174978 A JP 7174978A JP 7174978 A JP7174978 A JP 7174978A JP S54162467 A JPS54162467 A JP S54162467A
Authority
JP
Japan
Prior art keywords
support plate
external circumference
substrate
solder
holes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7174978A
Other languages
Japanese (ja)
Inventor
Mitsuo Odate
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7174978A priority Critical patent/JPS54162467A/en
Publication of JPS54162467A publication Critical patent/JPS54162467A/en
Pending legal-status Critical Current

Links

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  • Die Bonding (AREA)

Abstract

PURPOSE: To reduce the potential stress caused at the external circumference of the substrate, by providing a plurality of through-holes at the external circumference of the metal support plate fixed to the semiconductor substrate and adopting the shape in which no solder for fixing is present at the through-holes.
CONSTITUTION: The power diode element substrate 1 in which the cathode electrode is formed at the surface having PNN+ junction and the anode at the back side, is fixed to the metal support plate 2 of Mo, W and Kovar close in the thermal expansion coefficient by using the solder 3 of Al or Al-Si alloy. With this constitution, a plurality of through-holes 4 are provided at the external circumference of the metal support plate 2 while keeping orthogonal to the surface and the attachment of the solder 3 is avoided here. Thus, the external diameter of the soldered surface at the support plate 2 is effectively made small, the maximum potential stress caused at the external circumference of the substrate 1 is reduced, to increase the reliability of the element.
COPYRIGHT: (C)1979,JPO&Japio
JP7174978A 1978-06-13 1978-06-13 Semiconductor element Pending JPS54162467A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7174978A JPS54162467A (en) 1978-06-13 1978-06-13 Semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7174978A JPS54162467A (en) 1978-06-13 1978-06-13 Semiconductor element

Publications (1)

Publication Number Publication Date
JPS54162467A true JPS54162467A (en) 1979-12-24

Family

ID=13469481

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7174978A Pending JPS54162467A (en) 1978-06-13 1978-06-13 Semiconductor element

Country Status (1)

Country Link
JP (1) JPS54162467A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6255344U (en) * 1985-09-26 1987-04-06

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6255344U (en) * 1985-09-26 1987-04-06

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