JPS5648030A - Semiconductor electron emitting device - Google Patents

Semiconductor electron emitting device

Info

Publication number
JPS5648030A
JPS5648030A JP12231679A JP12231679A JPS5648030A JP S5648030 A JPS5648030 A JP S5648030A JP 12231679 A JP12231679 A JP 12231679A JP 12231679 A JP12231679 A JP 12231679A JP S5648030 A JPS5648030 A JP S5648030A
Authority
JP
Japan
Prior art keywords
gold
copper
alkali metal
emitting device
silver
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12231679A
Other languages
Japanese (ja)
Other versions
JPS6057174B2 (en
Inventor
Tokuzo Sukegawa
Hirobumi Suga
Tsutomu Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shizuoka University NUC
Original Assignee
Shizuoka University NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shizuoka University NUC filed Critical Shizuoka University NUC
Priority to JP54122316A priority Critical patent/JPS6057174B2/en
Publication of JPS5648030A publication Critical patent/JPS5648030A/en
Publication of JPS6057174B2 publication Critical patent/JPS6057174B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode

Landscapes

  • Cold Cathode And The Manufacture (AREA)
  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)

Abstract

PURPOSE:To reduce the deterioration due to againg and to stabilize the operation over a long period of time, by providing an active layer composed of one of alkali metal, gold and copper and oxygen on the surface of semiconductor having p type conductivity. CONSTITUTION:Phosphoric gallium diode 1 having p-n junction of the structure suitable for a cold cathode is fixed to a supporting base 13 supported by electrode rods 3, 4 in an outer container 7. At least one deposition source 8 of alkali metal source 6 and gold, silver and copper is provided in the container 7. An active layer composed of at least one of alkali metal and gold, silver and copper, and oxygen is formed on the surface of the diode 1 by deposition.
JP54122316A 1979-09-24 1979-09-24 semiconductor electron emission device Expired JPS6057174B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54122316A JPS6057174B2 (en) 1979-09-24 1979-09-24 semiconductor electron emission device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54122316A JPS6057174B2 (en) 1979-09-24 1979-09-24 semiconductor electron emission device

Publications (2)

Publication Number Publication Date
JPS5648030A true JPS5648030A (en) 1981-05-01
JPS6057174B2 JPS6057174B2 (en) 1985-12-13

Family

ID=14832928

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54122316A Expired JPS6057174B2 (en) 1979-09-24 1979-09-24 semiconductor electron emission device

Country Status (1)

Country Link
JP (1) JPS6057174B2 (en)

Also Published As

Publication number Publication date
JPS6057174B2 (en) 1985-12-13

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