JPS5436595A - Preparation of bubble memory chip - Google Patents

Preparation of bubble memory chip

Info

Publication number
JPS5436595A
JPS5436595A JP10153777A JP10153777A JPS5436595A JP S5436595 A JPS5436595 A JP S5436595A JP 10153777 A JP10153777 A JP 10153777A JP 10153777 A JP10153777 A JP 10153777A JP S5436595 A JPS5436595 A JP S5436595A
Authority
JP
Japan
Prior art keywords
preparation
memory chip
bubble memory
conductive layer
intermediste
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10153777A
Other languages
Japanese (ja)
Other versions
JPS5816552B2 (en
Inventor
Toshio Oku
Masaki Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP10153777A priority Critical patent/JPS5816552B2/en
Publication of JPS5436595A publication Critical patent/JPS5436595A/en
Publication of JPS5816552B2 publication Critical patent/JPS5816552B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Thin Magnetic Films (AREA)

Abstract

PURPOSE: To enhance the quality and the productivity by using a plasma etching in order to connect a first conductive layer with a second metal conductive layer installin a through-hole which penetrates an intermediste insulating layer.
COPYRIGHT: (C)1979,JPO&Japio
JP10153777A 1977-08-26 1977-08-26 Bubble memory chip manufacturing method Expired JPS5816552B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10153777A JPS5816552B2 (en) 1977-08-26 1977-08-26 Bubble memory chip manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10153777A JPS5816552B2 (en) 1977-08-26 1977-08-26 Bubble memory chip manufacturing method

Publications (2)

Publication Number Publication Date
JPS5436595A true JPS5436595A (en) 1979-03-17
JPS5816552B2 JPS5816552B2 (en) 1983-03-31

Family

ID=14303178

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10153777A Expired JPS5816552B2 (en) 1977-08-26 1977-08-26 Bubble memory chip manufacturing method

Country Status (1)

Country Link
JP (1) JPS5816552B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5740792A (en) * 1981-06-24 1982-03-06 Hitachi Ltd Magnetic bubble memory element
JPS57203285A (en) * 1981-06-10 1982-12-13 Nec Corp Magnetic bubble storage device
JPS5832291A (en) * 1981-08-20 1983-02-25 Nec Corp Magnetic bubble storage device
JPS60110328A (en) * 1983-11-17 1985-06-15 Toyo Eng Corp Catalytic reaction device
JPS6116091A (en) * 1984-07-02 1986-01-24 Fujitsu Ltd Magnetic bubble memory element

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57203285A (en) * 1981-06-10 1982-12-13 Nec Corp Magnetic bubble storage device
JPS5740792A (en) * 1981-06-24 1982-03-06 Hitachi Ltd Magnetic bubble memory element
JPS5832291A (en) * 1981-08-20 1983-02-25 Nec Corp Magnetic bubble storage device
JPS60110328A (en) * 1983-11-17 1985-06-15 Toyo Eng Corp Catalytic reaction device
JPS6116091A (en) * 1984-07-02 1986-01-24 Fujitsu Ltd Magnetic bubble memory element

Also Published As

Publication number Publication date
JPS5816552B2 (en) 1983-03-31

Similar Documents

Publication Publication Date Title
JPS5436595A (en) Preparation of bubble memory chip
JPS5370688A (en) Production of semoconductor device
JPS5222477A (en) Sic-si type equalizing tube for manufacturing gas impermeable semi conductors
JPS52149076A (en) Semiconductor integrated circuit and its preparing method
JPS51118391A (en) Manufacturing process for semiconducter unit
JPS533081A (en) Integrated circuit wiring method
JPS5338274A (en) Lc compound circuit
JPS5380183A (en) Semiconductor device
JPS535571A (en) Circuit block and its manufacture
JPS5496366A (en) Semiconductor device
JPS51150984A (en) Dielectric isolation method
JPS5380161A (en) Electrode formation of semiconductor
JPS5310266A (en) Production of soldred semiconductor wafers
JPS52116073A (en) Hermetic structure in which integrated circuit element is sealed up ai rtightly
JPS5441666A (en) Semiconductor integrated circuit element
JPS51112266A (en) Semiconductor device production method
JPS5335488A (en) Production of photoconductive element
JPS51147780A (en) Insulating process of conductor
JPS5213787A (en) Production method of mos-type integrated circuit
JPS53142168A (en) Reproductive use of semiconductor substrate
JPS52128087A (en) Semiconductor display unit
JPS51142978A (en) Mounting method of circuit elements
JPS51151094A (en) Light conductive element and its manufacturing method
JPS5246773A (en) Process for production of lead frame for semiconductors
JPS5437590A (en) Manufacture of planar-thyristor