JPS5437478A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5437478A
JPS5437478A JP10268577A JP10268577A JPS5437478A JP S5437478 A JPS5437478 A JP S5437478A JP 10268577 A JP10268577 A JP 10268577A JP 10268577 A JP10268577 A JP 10268577A JP S5437478 A JPS5437478 A JP S5437478A
Authority
JP
Japan
Prior art keywords
semiconductor device
decided
transistors
relation
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10268577A
Other languages
Japanese (ja)
Inventor
Takashi Iizuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10268577A priority Critical patent/JPS5437478A/en
Publication of JPS5437478A publication Critical patent/JPS5437478A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors

Landscapes

  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a power transistor featuring a high current amplification rate by adding the conditions which is decided in relation to the dielectric strength of each region of the transistors to the impurity density of the first and second layers when the Darlington transistor is formed with use of the double epitaxial.
JP10268577A 1977-08-29 1977-08-29 Semiconductor device Pending JPS5437478A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10268577A JPS5437478A (en) 1977-08-29 1977-08-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10268577A JPS5437478A (en) 1977-08-29 1977-08-29 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5437478A true JPS5437478A (en) 1979-03-19

Family

ID=14334083

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10268577A Pending JPS5437478A (en) 1977-08-29 1977-08-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5437478A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019530226A (en) * 2016-09-09 2019-10-17 日本テキサス・インスツルメンツ合同会社 High performance super β (SBNPN)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019530226A (en) * 2016-09-09 2019-10-17 日本テキサス・インスツルメンツ合同会社 High performance super β (SBNPN)

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