JPS5447577A - Production of semiconductor device - Google Patents

Production of semiconductor device

Info

Publication number
JPS5447577A
JPS5447577A JP11417477A JP11417477A JPS5447577A JP S5447577 A JPS5447577 A JP S5447577A JP 11417477 A JP11417477 A JP 11417477A JP 11417477 A JP11417477 A JP 11417477A JP S5447577 A JPS5447577 A JP S5447577A
Authority
JP
Japan
Prior art keywords
oxide film
gaas
operating layer
film
boiling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11417477A
Other languages
Japanese (ja)
Inventor
Kinshiro Kosemura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11417477A priority Critical patent/JPS5447577A/en
Publication of JPS5447577A publication Critical patent/JPS5447577A/en
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: To obtain an extremely stable oxide film and reduce leakage current and low frequency noise by froming electrodes on a GaAs operating layer then boiling the same in pure water being demineralized water thereby producing the oxide film.
CONSTITUTION: A GaAs operating layer 2 is grown on a GaAs substrate 1 by a liquid phase or vapor phase epitaxial method, and a metal film 3 for Schottky barrier electrodes such as of Al is evaporated thereon. Next, the film 3 is patterned by photolithography to form Schottky barrier electrodes 3'. Thereafter, this is dipped in a quartz vessel filled with demineralized water and is subjected to boiling for about 1 hour at 100°C. Then, an extremely stable GaAs oxide film 4 of about 300Å in thickness is formed on the exposed surface of the operating layer 2. At this time, no modified layer is pdoduced at the interface of the operating layer 2 and oxide film 4, hence leakage current and low frequency noise are reduced
COPYRIGHT: (C)1979,JPO&Japio
JP11417477A 1977-09-22 1977-09-22 Production of semiconductor device Pending JPS5447577A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11417477A JPS5447577A (en) 1977-09-22 1977-09-22 Production of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11417477A JPS5447577A (en) 1977-09-22 1977-09-22 Production of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5447577A true JPS5447577A (en) 1979-04-14

Family

ID=14631023

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11417477A Pending JPS5447577A (en) 1977-09-22 1977-09-22 Production of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5447577A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59227128A (en) * 1983-06-08 1984-12-20 Hitachi Ltd Oxidation method for semiconductor substrate
JP2008053581A (en) * 2006-08-28 2008-03-06 Osaka Univ Oxide formation method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59227128A (en) * 1983-06-08 1984-12-20 Hitachi Ltd Oxidation method for semiconductor substrate
JP2008053581A (en) * 2006-08-28 2008-03-06 Osaka Univ Oxide formation method

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