JPS5452460A - Thyristor device - Google Patents

Thyristor device

Info

Publication number
JPS5452460A
JPS5452460A JP11497178A JP11497178A JPS5452460A JP S5452460 A JPS5452460 A JP S5452460A JP 11497178 A JP11497178 A JP 11497178A JP 11497178 A JP11497178 A JP 11497178A JP S5452460 A JPS5452460 A JP S5452460A
Authority
JP
Japan
Prior art keywords
reverse bias
electrode terminal
gate
thyristor
cathode electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11497178A
Other languages
Japanese (ja)
Other versions
JPS57755B2 (en
Inventor
Masahiko Akamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11497178A priority Critical patent/JPS5452460A/en
Publication of JPS5452460A publication Critical patent/JPS5452460A/en
Publication of JPS57755B2 publication Critical patent/JPS57755B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Thyristors (AREA)
  • Power Conversion In General (AREA)
  • Thyristor Switches And Gates (AREA)

Abstract

PURPOSE: To reinforce the recovery of an intermediate junction by a gate reverse bias, by making it possible to bias reversely the intermediate junction by the gate reverse bias, by interposing a thyristor device into a reverse parallel rectifier.
CONSTITUTION: This device is equipped with four-layer thyristor 1 with anode electrode terminal A, cathode electrode terminal K and gate electrode terminal G, and double layer rectifier 6 with cathode electrode Kd connected to anode electrode terminal Ad of thyristor 1 and anode electrode Ad connected to cathode electrode terminal K. Then, gate reverse bias circuit 2 is connected between gate electrode terminal G and cathode electrode terminal K of this thyristor 1, and anode reverse bias circuit 3 (13) is connected between anode electrode Ad and cathode electrode Kd of rectifier circuit 6. Next, the reverse bias of the intermediate junction by the reverse bias of gate reverse bias circuit 2 is made possible, thereby reinforcing the recovery of the intermediate junction
COPYRIGHT: (C)1979,JPO&Japio
JP11497178A 1978-09-18 1978-09-18 Thyristor device Granted JPS5452460A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11497178A JPS5452460A (en) 1978-09-18 1978-09-18 Thyristor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11497178A JPS5452460A (en) 1978-09-18 1978-09-18 Thyristor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP48069471A Division JPS5238710B2 (en) 1973-06-20 1973-06-20

Publications (2)

Publication Number Publication Date
JPS5452460A true JPS5452460A (en) 1979-04-25
JPS57755B2 JPS57755B2 (en) 1982-01-07

Family

ID=14651151

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11497178A Granted JPS5452460A (en) 1978-09-18 1978-09-18 Thyristor device

Country Status (1)

Country Link
JP (1) JPS5452460A (en)

Also Published As

Publication number Publication date
JPS57755B2 (en) 1982-01-07

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