JPS5453961A - Heat treatment method of wafer and wafer fastening tool used for it - Google Patents

Heat treatment method of wafer and wafer fastening tool used for it

Info

Publication number
JPS5453961A
JPS5453961A JP12009577A JP12009577A JPS5453961A JP S5453961 A JPS5453961 A JP S5453961A JP 12009577 A JP12009577 A JP 12009577A JP 12009577 A JP12009577 A JP 12009577A JP S5453961 A JPS5453961 A JP S5453961A
Authority
JP
Japan
Prior art keywords
wafer
heat treatment
treatment method
tool used
fastening tool
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12009577A
Other languages
Japanese (ja)
Inventor
Isao Shimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12009577A priority Critical patent/JPS5453961A/en
Publication of JPS5453961A publication Critical patent/JPS5453961A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To make uniform the amount of impurity deposition and the diffusion speed, by locating the wafer with an angle to the direction of gas flow.
CONSTITUTION: In the diffusion furnace 10 in which gas G flows, the wafer 14 is held 12 with an angle from the normal line to the gas flow. Each wafer is approximately parallel and the gas smoothly flows between them and no turbulent flow is caused. Thus, the dispersion in the amount of impurity deposition in the wafer and between wafers and in the growing speed of SiO2 can be reduced. The angle tilted is recommended as 45 to 60°
COPYRIGHT: (C)1979,JPO&Japio
JP12009577A 1977-10-07 1977-10-07 Heat treatment method of wafer and wafer fastening tool used for it Pending JPS5453961A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12009577A JPS5453961A (en) 1977-10-07 1977-10-07 Heat treatment method of wafer and wafer fastening tool used for it

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12009577A JPS5453961A (en) 1977-10-07 1977-10-07 Heat treatment method of wafer and wafer fastening tool used for it

Publications (1)

Publication Number Publication Date
JPS5453961A true JPS5453961A (en) 1979-04-27

Family

ID=14777778

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12009577A Pending JPS5453961A (en) 1977-10-07 1977-10-07 Heat treatment method of wafer and wafer fastening tool used for it

Country Status (1)

Country Link
JP (1) JPS5453961A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62162835U (en) * 1986-04-03 1987-10-16

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62162835U (en) * 1986-04-03 1987-10-16

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