JPS5460582A - Electrode wiring and its forming method in semiconductor device - Google Patents

Electrode wiring and its forming method in semiconductor device

Info

Publication number: JPS5460582A
Authority: JP; Japan
Prior art keywords: film; groove; wiring; electrode wiring; gold
Prior art date: 1977-10-24
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP12683877A

Other languages

English (en)

Other versions

JPS6041461B2 (ja

Inventor

Tatsu Ito

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Hitachi Ltd

Original Assignee

Hitachi Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1977-10-24

Filing date

1977-10-24

Publication date

1979-05-16

1977-10-24 Application filed by Hitachi Ltd filed Critical Hitachi Ltd

1977-10-24 Priority to JP12683877A priority Critical patent/JPS6041461B2/ja

1979-05-16 Publication of JPS5460582A publication Critical patent/JPS5460582A/ja

1985-09-17 Publication of JPS6041461B2 publication Critical patent/JPS6041461B2/ja

Status Expired legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title 1
PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 4
239000010931 gold Substances 0.000 abstract 4
229910052737 gold Inorganic materials 0.000 abstract 4
229910052681 coesite Inorganic materials 0.000 abstract 2
229910052906 cristobalite Inorganic materials 0.000 abstract 2
239000000377 silicon dioxide Substances 0.000 abstract 2
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
229910052682 stishovite Inorganic materials 0.000 abstract 2
229910052905 tridymite Inorganic materials 0.000 abstract 2
ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 abstract 1
101000617728 Homo sapiens Pregnancy-specific beta-1-glycoprotein 9 Proteins 0.000 abstract 1
102100021983 Pregnancy-specific beta-1-glycoprotein 9 Human genes 0.000 abstract 1
229910052581 Si3N4 Inorganic materials 0.000 abstract 1
230000015572 biosynthetic process Effects 0.000 abstract 1
239000011248 coating agent Substances 0.000 abstract 1
238000000576 coating method Methods 0.000 abstract 1
238000009713 electroplating Methods 0.000 abstract 1
229910021339 platinum silicide Inorganic materials 0.000 abstract 1
230000001681 protective effect Effects 0.000 abstract 1

Landscapes

Electrodes Of Semiconductors (AREA)
Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

JP12683877A 1977-10-24 1977-10-24 半導体装置における電極配線の形成法 Expired JPS6041461B2 (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP12683877A JPS6041461B2 (ja)	1977-10-24	1977-10-24	半導体装置における電極配線の形成法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP12683877A JPS6041461B2 (ja)	1977-10-24	1977-10-24	半導体装置における電極配線の形成法

Publications (2)

Publication Number	Publication Date
JPS5460582A true JPS5460582A (en)	1979-05-16
JPS6041461B2 JPS6041461B2 (ja)	1985-09-17

Family

ID=14945136

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP12683877A Expired JPS6041461B2 (ja)	1977-10-24	1977-10-24	半導体装置における電極配線の形成法

Country Status (1)

Country	Link
JP (1)	JPS6041461B2 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS582044A (ja) *	1981-06-26	1983-01-07	Seiko Epson Corp	半導体装置の製造方法
US4822753A (en) *	1988-05-09	1989-04-18	Motorola, Inc.	Method for making a w/tin contact
US5059555A (en) *	1990-08-20	1991-10-22	National Semiconductor Corporation	Method to fabricate vertical fuse devices and Schottky diodes using thin sacrificial layer

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH04114962U (ja) *	1991-03-27	1992-10-12	アイホン株式会社	筐体扉の開閉構造

1977
- 1977-10-24 JP JP12683877A patent/JPS6041461B2/ja not_active Expired

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS582044A (ja) *	1981-06-26	1983-01-07	Seiko Epson Corp	半導体装置の製造方法
US4822753A (en) *	1988-05-09	1989-04-18	Motorola, Inc.	Method for making a w/tin contact
US5059555A (en) *	1990-08-20	1991-10-22	National Semiconductor Corporation	Method to fabricate vertical fuse devices and Schottky diodes using thin sacrificial layer

Also Published As

Publication number	Publication date
JPS6041461B2 (ja)	1985-09-17

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