JPS546457A - Ion-injecting method - Google Patents
Ion-injecting methodInfo
- Publication number
- JPS546457A JPS546457A JP7259477A JP7259477A JPS546457A JP S546457 A JPS546457 A JP S546457A JP 7259477 A JP7259477 A JP 7259477A JP 7259477 A JP7259477 A JP 7259477A JP S546457 A JPS546457 A JP S546457A
- Authority
- JP
- Japan
- Prior art keywords
- ion
- injecting method
- recoiled
- knock
- deteriorating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000002542 deteriorative effect Effects 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE: To prevent characteristics from deteriorating, by injecting ions into a SiO2 film formed thinner than the film thickness at the time when the supply density of O2 recoiled through a knock-on phenomenon to a substrate is at its maximum.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7259477A JPS546457A (en) | 1977-06-16 | 1977-06-16 | Ion-injecting method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7259477A JPS546457A (en) | 1977-06-16 | 1977-06-16 | Ion-injecting method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS546457A true JPS546457A (en) | 1979-01-18 |
Family
ID=13493868
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7259477A Pending JPS546457A (en) | 1977-06-16 | 1977-06-16 | Ion-injecting method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS546457A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5918633A (en) * | 1982-07-22 | 1984-01-31 | Toshiba Corp | Resist applying apparatus |
| JPS6410675A (en) * | 1987-07-03 | 1989-01-13 | Nec Corp | Manufacture of semiconductor photodetector |
| JPH0196955A (en) * | 1987-10-09 | 1989-04-14 | Hitachi Ltd | Semiconductor device and manufacture thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS505024A (en) * | 1973-03-22 | 1975-01-20 |
-
1977
- 1977-06-16 JP JP7259477A patent/JPS546457A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS505024A (en) * | 1973-03-22 | 1975-01-20 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5918633A (en) * | 1982-07-22 | 1984-01-31 | Toshiba Corp | Resist applying apparatus |
| JPS6410675A (en) * | 1987-07-03 | 1989-01-13 | Nec Corp | Manufacture of semiconductor photodetector |
| JPH0196955A (en) * | 1987-10-09 | 1989-04-14 | Hitachi Ltd | Semiconductor device and manufacture thereof |
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