JPS5472668A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS5472668A
JPS5472668A JP13966177A JP13966177A JPS5472668A JP S5472668 A JPS5472668 A JP S5472668A JP 13966177 A JP13966177 A JP 13966177A JP 13966177 A JP13966177 A JP 13966177A JP S5472668 A JPS5472668 A JP S5472668A
Authority
JP
Japan
Prior art keywords
film
ion injection
mask
nitride film
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13966177A
Other languages
English (en)
Other versions
JPS6139751B2 (ja
Inventor
Takashi Ito
Shinpei Tsuchiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13966177A priority Critical patent/JPS5472668A/ja
Publication of JPS5472668A publication Critical patent/JPS5472668A/ja
Publication of JPS6139751B2 publication Critical patent/JPS6139751B2/ja
Granted legal-status Critical Current

Links

JP13966177A 1977-11-21 1977-11-21 Manufacture for semiconductor device Granted JPS5472668A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13966177A JPS5472668A (en) 1977-11-21 1977-11-21 Manufacture for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13966177A JPS5472668A (en) 1977-11-21 1977-11-21 Manufacture for semiconductor device

Publications (2)

Publication Number Publication Date
JPS5472668A true JPS5472668A (en) 1979-06-11
JPS6139751B2 JPS6139751B2 (ja) 1986-09-05

Family

ID=15250459

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13966177A Granted JPS5472668A (en) 1977-11-21 1977-11-21 Manufacture for semiconductor device

Country Status (1)

Country Link
JP (1) JPS5472668A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02246325A (ja) * 1989-02-13 1990-10-02 Internatl Business Mach Corp <Ibm> トランジスタの製造方法
KR100314715B1 (ko) * 1997-01-16 2002-02-19 가네꼬 히사시 고저항막상에열질화막을가지는반도체장치및그제조방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50148070A (ja) * 1974-05-20 1975-11-27
JPS51148377A (en) * 1975-06-14 1976-12-20 Fujitsu Ltd Manufacturing method of mis type semiconductor device
JPS5255375A (en) * 1975-10-28 1977-05-06 Ibm Method of making semiconductor devices

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50148070A (ja) * 1974-05-20 1975-11-27
JPS51148377A (en) * 1975-06-14 1976-12-20 Fujitsu Ltd Manufacturing method of mis type semiconductor device
JPS5255375A (en) * 1975-10-28 1977-05-06 Ibm Method of making semiconductor devices

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02246325A (ja) * 1989-02-13 1990-10-02 Internatl Business Mach Corp <Ibm> トランジスタの製造方法
KR100314715B1 (ko) * 1997-01-16 2002-02-19 가네꼬 히사시 고저항막상에열질화막을가지는반도체장치및그제조방법
US6358808B1 (en) 1997-01-16 2002-03-19 Nec Corporation Semiconductor element with thermally nitrided film on high resistance film and method of manufacturing the same

Also Published As

Publication number Publication date
JPS6139751B2 (ja) 1986-09-05

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