JPS5477064A - Electrode forming method of compound semiconductors - Google Patents

Electrode forming method of compound semiconductors

Info

Publication number
JPS5477064A
JPS5477064A JP14383277A JP14383277A JPS5477064A JP S5477064 A JPS5477064 A JP S5477064A JP 14383277 A JP14383277 A JP 14383277A JP 14383277 A JP14383277 A JP 14383277A JP S5477064 A JPS5477064 A JP S5477064A
Authority
JP
Japan
Prior art keywords
forming method
electrode forming
compound semiconductors
group
inp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14383277A
Other languages
Japanese (ja)
Inventor
Takeshi Kobayashi
Keiko Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP14383277A priority Critical patent/JPS5477064A/en
Publication of JPS5477064A publication Critical patent/JPS5477064A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To form ohmic electrodes of low electric resistances and physically and chemically superior characteristics by depositing thin films of Ag on InP.
CONSTITUTION: Metal thin films 5 of Ag or containing Ag are deposited on the surfaces of a multielement compound semiconductor 2 constituted by InP or at least one element of In and P and an element selected from at least 1 group of group III and group V. The films are then subjected to sintering. Thereby, ρ ≈ 1 × 10-5Ωcm2 may be obtained for the specific resistance value ρs of the ohmic electrodes thus formed.
COPYRIGHT: (C)1979,JPO&Japio
JP14383277A 1977-12-02 1977-12-02 Electrode forming method of compound semiconductors Pending JPS5477064A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14383277A JPS5477064A (en) 1977-12-02 1977-12-02 Electrode forming method of compound semiconductors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14383277A JPS5477064A (en) 1977-12-02 1977-12-02 Electrode forming method of compound semiconductors

Publications (1)

Publication Number Publication Date
JPS5477064A true JPS5477064A (en) 1979-06-20

Family

ID=15347974

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14383277A Pending JPS5477064A (en) 1977-12-02 1977-12-02 Electrode forming method of compound semiconductors

Country Status (1)

Country Link
JP (1) JPS5477064A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5675157A (en) * 1994-07-15 1997-10-07 U.S. Philips Corporation Transferred electron effect device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3214654A (en) * 1961-02-01 1965-10-26 Rca Corp Ohmic contacts to iii-v semiconductive compound bodies

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3214654A (en) * 1961-02-01 1965-10-26 Rca Corp Ohmic contacts to iii-v semiconductive compound bodies

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5675157A (en) * 1994-07-15 1997-10-07 U.S. Philips Corporation Transferred electron effect device

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