JPS55107238A - Semiconductor device and method of manufacturing the same - Google Patents

Semiconductor device and method of manufacturing the same

Info

Publication number
JPS55107238A
JPS55107238A JP1335479A JP1335479A JPS55107238A JP S55107238 A JPS55107238 A JP S55107238A JP 1335479 A JP1335479 A JP 1335479A JP 1335479 A JP1335479 A JP 1335479A JP S55107238 A JPS55107238 A JP S55107238A
Authority
JP
Japan
Prior art keywords
film
chips
frame
bond
jointing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1335479A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6153851B2 (2
Inventor
Hiroshi Kato
Masamichi Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1335479A priority Critical patent/JPS55107238A/ja
Publication of JPS55107238A publication Critical patent/JPS55107238A/ja
Publication of JPS6153851B2 publication Critical patent/JPS6153851B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07336—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/321—Structures or relative sizes of die-attach connectors
    • H10W72/322—Multilayered die-attach connectors, e.g. a coating on a top surface of a core
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Die Bonding (AREA)
JP1335479A 1979-02-09 1979-02-09 Semiconductor device and method of manufacturing the same Granted JPS55107238A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1335479A JPS55107238A (en) 1979-02-09 1979-02-09 Semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1335479A JPS55107238A (en) 1979-02-09 1979-02-09 Semiconductor device and method of manufacturing the same

Publications (2)

Publication Number Publication Date
JPS55107238A true JPS55107238A (en) 1980-08-16
JPS6153851B2 JPS6153851B2 (2) 1986-11-19

Family

ID=11830759

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1335479A Granted JPS55107238A (en) 1979-02-09 1979-02-09 Semiconductor device and method of manufacturing the same

Country Status (1)

Country Link
JP (1) JPS55107238A (2)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5768040A (en) * 1980-10-15 1982-04-26 Hitachi Ltd Electrode structure for semiconductor device
JPS57210637A (en) * 1981-06-18 1982-12-24 Mitsubishi Electric Corp Semiconductor device
JPS59193036A (ja) * 1983-04-16 1984-11-01 Toshiba Corp 半導体装置の製造方法
US5288456A (en) * 1993-02-23 1994-02-22 International Business Machines Corporation Compound with room temperature electrical resistivity comparable to that of elemental copper
JP2007109829A (ja) * 2005-10-12 2007-04-26 Dowa Holdings Co Ltd 半田接合形成方法
JP2008235898A (ja) * 2007-03-19 2008-10-02 Infineon Technologies Ag パワー半導体モジュール、パワー半導体モジュールの製造方法、および、半導体チップ
JP2015053456A (ja) * 2013-09-09 2015-03-19 株式会社東芝 半導体装置及びその製造方法
JP2017130547A (ja) * 2016-01-20 2017-07-27 トヨタ自動車株式会社 半導体装置の製造方法
JP2017183676A (ja) * 2016-03-31 2017-10-05 Ｊｘ金属株式会社 基材との接合面が表面処理された半導体、および銅粉ペーストによる接合方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS527675A (en) * 1975-07-09 1977-01-20 Hitachi Ltd Semiconductor device
JPS5353256A (en) * 1976-10-25 1978-05-15 Mitsubishi Electric Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS527675A (en) * 1975-07-09 1977-01-20 Hitachi Ltd Semiconductor device
JPS5353256A (en) * 1976-10-25 1978-05-15 Mitsubishi Electric Corp Semiconductor device

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5768040A (en) * 1980-10-15 1982-04-26 Hitachi Ltd Electrode structure for semiconductor device
JPS57210637A (en) * 1981-06-18 1982-12-24 Mitsubishi Electric Corp Semiconductor device
JPS59193036A (ja) * 1983-04-16 1984-11-01 Toshiba Corp 半導体装置の製造方法
US5288456A (en) * 1993-02-23 1994-02-22 International Business Machines Corporation Compound with room temperature electrical resistivity comparable to that of elemental copper
JP2007109829A (ja) * 2005-10-12 2007-04-26 Dowa Holdings Co Ltd 半田接合形成方法
JP2008235898A (ja) * 2007-03-19 2008-10-02 Infineon Technologies Ag パワー半導体モジュール、パワー半導体モジュールの製造方法、および、半導体チップ
JP2012074726A (ja) * 2007-03-19 2012-04-12 Infineon Technologies Ag パワー半導体モジュール製造方法
JP2015053456A (ja) * 2013-09-09 2015-03-19 株式会社東芝 半導体装置及びその製造方法
EP2858107A3 (en) * 2013-09-09 2015-10-21 Kabushiki Kaisha Toshiba Semiconductor device with a bonding layer with a region comprising Ti and a region comprising Sn but with substantially no region comprising both Ti and Sn and method for manufacturing the same
JP2017130547A (ja) * 2016-01-20 2017-07-27 トヨタ自動車株式会社 半導体装置の製造方法
JP2017183676A (ja) * 2016-03-31 2017-10-05 Ｊｘ金属株式会社 基材との接合面が表面処理された半導体、および銅粉ペーストによる接合方法

Also Published As

Publication number Publication date
JPS6153851B2 (2) 1986-11-19

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