JPS5671934A - Semiconductor manufacturing device - Google Patents

Abstract

PURPOSE:To uniform a diffusion concentration by composing a cylindrical reactor core pipe as double wall structure wherein the gaps are used as a gas supply passage and an exhaust passage for raw material gases and many small holes are provided at internal walls and wafers vertically placed on support bases are passed through in a furnace by heating the furnace. CONSTITUTION:A quartz cylindrical reactor core pipe 11 surrounding the external circumference by heaters 29 is composed as double wall structure having internal walls 16. One end section of the gaps caused between the pipe 11 and the walls 16 are closed by covers 25 and the gaps are divided into the upper section and the lower section by bulkheads. Many small holes 20 and 19 are opened at the upper and the lower internal walls 16. The lower gap is used as a gas supply passage 21 and the upper gas as a gas exhaust passage 24. Carrier gas 22 and doping gas 23 are sent to the supply passage 21 and they are exhausted from the exhaust passage 24 through the small holes 20 after injecting them into the pipe 11 from the small holes 19. The pipe 11 is composed as the above. And support bases 20 vertically placing wafers 17 are inserted from an insertion port 12 and are taken out from a lead port 13 after finishing diffusion.