JPS551152A - Method of fabricating photoconducting element - Google Patents

Method of fabricating photoconducting element

Info

Publication number
JPS551152A
JPS551152A JP7444678A JP7444678A JPS551152A JP S551152 A JPS551152 A JP S551152A JP 7444678 A JP7444678 A JP 7444678A JP 7444678 A JP7444678 A JP 7444678A JP S551152 A JPS551152 A JP S551152A
Authority
JP
Japan
Prior art keywords
layer
electrode
substrate
sputtering method
transparent electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7444678A
Other languages
Japanese (ja)
Inventor
Takao Chikamura
Shinji Fujiwara
Shoichi Fukai
Yasuaki Terui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP7444678A priority Critical patent/JPS551152A/en
Priority to US06/006,129 priority patent/US4236829A/en
Priority to GB7903077A priority patent/GB2014783B/en
Priority to FR7902477A priority patent/FR2416554A1/en
Priority to DE2903651A priority patent/DE2903651C2/en
Publication of JPS551152A publication Critical patent/JPS551152A/en
Pending legal-status Critical Current

Links

Landscapes

  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE: To provide the subject method comprising the steps of ; growing a layer of (Zn1-xCdxTe)1-y (In2Te3)y, and causing a transparent electrode on the layer by sputtering method thereby to enhance the sensitivity of the element and to decrease the dark current.
CONSTITUTION: N+ type regions 11 and 12 are diffusion-formed on a P type Si substrate 10, and in insulating film 14 including a gate electrode 13 made of a polycrystal of Si at a position corresponding to the region 12 is formed on the whole surface of the substrate 10. Then, on the region 11 there is formed a contact hole in the film 14, and an electrode 15 is caused to adhere onto the film 14 including the hole made of Mo, W or the like by sputtering method. Thereafter, a positive hole blocking layer 16 made of ZnSe or the like and a layer 17 of (Zn0.7 Cd0.3 Te)0.95 (In2 Te3)0.05 are laminated thereon, and a transparent electrode 18 made of Au, Pt, In2O3, SnO2 or the like, having a work function of more than 4.5 eV is covered thereon similarly by sputtering method, and a power source is connected between said transparent electrode 18 and the back surface of the substrate 10. By constituting the element as described above, light 19 is incident on the electrode 18 side, and the sensitivity of the element is high all over the full visible light area.
COPYRIGHT: (C)1980,JPO&Japio
JP7444678A 1978-01-31 1978-06-19 Method of fabricating photoconducting element Pending JPS551152A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP7444678A JPS551152A (en) 1978-06-19 1978-06-19 Method of fabricating photoconducting element
US06/006,129 US4236829A (en) 1978-01-31 1979-01-24 Solid-state image sensor
GB7903077A GB2014783B (en) 1978-01-31 1979-01-29 Solid-state image sensor
FR7902477A FR2416554A1 (en) 1978-01-31 1979-01-31 SOLID STATE SHOOTING DEVICE
DE2903651A DE2903651C2 (en) 1978-01-31 1979-01-31 Solid state image sensing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7444678A JPS551152A (en) 1978-06-19 1978-06-19 Method of fabricating photoconducting element

Publications (1)

Publication Number Publication Date
JPS551152A true JPS551152A (en) 1980-01-07

Family

ID=13547462

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7444678A Pending JPS551152A (en) 1978-01-31 1978-06-19 Method of fabricating photoconducting element

Country Status (1)

Country Link
JP (1) JPS551152A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5110715A (en) * 1974-07-05 1976-01-28 Hitachi Ltd
JPS5350614A (en) * 1976-10-19 1978-05-09 Matsushita Electric Ind Co Ltd Pick up tube target

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5110715A (en) * 1974-07-05 1976-01-28 Hitachi Ltd
JPS5350614A (en) * 1976-10-19 1978-05-09 Matsushita Electric Ind Co Ltd Pick up tube target

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