JPS55129995A - Insulating gate field effect transistor memory - Google Patents

Insulating gate field effect transistor memory

Info

Publication number
JPS55129995A
JPS55129995A JP3444179A JP3444179A JPS55129995A JP S55129995 A JPS55129995 A JP S55129995A JP 3444179 A JP3444179 A JP 3444179A JP 3444179 A JP3444179 A JP 3444179A JP S55129995 A JPS55129995 A JP S55129995A
Authority
JP
Japan
Prior art keywords
voltage
line
memory
limited
leak current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3444179A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6141076B2 (de
Inventor
Shinji Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3444179A priority Critical patent/JPS55129995A/ja
Publication of JPS55129995A publication Critical patent/JPS55129995A/ja
Publication of JPS6141076B2 publication Critical patent/JPS6141076B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
JP3444179A 1979-03-26 1979-03-26 Insulating gate field effect transistor memory Granted JPS55129995A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3444179A JPS55129995A (en) 1979-03-26 1979-03-26 Insulating gate field effect transistor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3444179A JPS55129995A (en) 1979-03-26 1979-03-26 Insulating gate field effect transistor memory

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP62177006A Division JPS6323298A (ja) 1987-07-17 1987-07-17 絶縁ゲ−ト電界効果トランジスタ・メモリ

Publications (2)

Publication Number Publication Date
JPS55129995A true JPS55129995A (en) 1980-10-08
JPS6141076B2 JPS6141076B2 (de) 1986-09-12

Family

ID=12414312

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3444179A Granted JPS55129995A (en) 1979-03-26 1979-03-26 Insulating gate field effect transistor memory

Country Status (1)

Country Link
JP (1) JPS55129995A (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58165800U (ja) * 1982-04-28 1983-11-04 日本電気株式会社 Ｅｐｒｏｍ書込み回路

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
THE TRANSACTIONS OF IECE OF JAPAN=1979 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58165800U (ja) * 1982-04-28 1983-11-04 日本電気株式会社 Ｅｐｒｏｍ書込み回路

Also Published As

Publication number Publication date
JPS6141076B2 (de) 1986-09-12

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