JPS55140225A - Method and device for sliding-boat-type liquid-phase epitaxial growth - Google Patents
Method and device for sliding-boat-type liquid-phase epitaxial growthInfo
- Publication number
- JPS55140225A JPS55140225A JP4786579A JP4786579A JPS55140225A JP S55140225 A JPS55140225 A JP S55140225A JP 4786579 A JP4786579 A JP 4786579A JP 4786579 A JP4786579 A JP 4786579A JP S55140225 A JPS55140225 A JP S55140225A
- Authority
- JP
- Japan
- Prior art keywords
- boat
- substrate
- support
- temperature
- grown
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE: To prevent thermal damages of substrates by reducing the heat capacity of a substrate-supporting portion to the very low value, and greatly shortening the time during which the temperature of the substrate is maintained at a high level.
CONSTITUTION: There is a slider 3 in which a raw-material solution 2 is contained on a boat 1. The point which is different from the conventional device is that a support 5 of a substrate 4 on which a crystal is grown is independent of the boat 1. A recess 6 for determining the position which accepts the support at a specified position is provided on the boat. The substrate support 5 is placed at a position separated from the main body of the boat 1. At first, the substrate 4 and the support 5 are held at a room temperature. Then, the support 5 is inserted into the recess 6. Since the heat capacity of the support is sufficiently smaller than that of the boat 1, the thermal equilibrium is quickly reached without disturbing the temperature in the furnace. Then, the crystal is grown by the normal process. In this constitution, since the time during which the substrate is kept at a high temperature is greatly shortened, the generation of the defects on the substrate surface can be prevented, and an epitaxial film of high quality can be obtained.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4786579A JPS55140225A (en) | 1979-04-20 | 1979-04-20 | Method and device for sliding-boat-type liquid-phase epitaxial growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4786579A JPS55140225A (en) | 1979-04-20 | 1979-04-20 | Method and device for sliding-boat-type liquid-phase epitaxial growth |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS55140225A true JPS55140225A (en) | 1980-11-01 |
Family
ID=12787261
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4786579A Pending JPS55140225A (en) | 1979-04-20 | 1979-04-20 | Method and device for sliding-boat-type liquid-phase epitaxial growth |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55140225A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59205715A (en) * | 1983-04-27 | 1984-11-21 | エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン | Slide board liquid phase epitaxial device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5237450B2 (en) * | 1974-03-25 | 1977-09-22 |
-
1979
- 1979-04-20 JP JP4786579A patent/JPS55140225A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5237450B2 (en) * | 1974-03-25 | 1977-09-22 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59205715A (en) * | 1983-04-27 | 1984-11-21 | エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン | Slide board liquid phase epitaxial device |
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