JPS5521186A - Ohmic electrode material for p-type 3-5 families compound semiconductor and forming method of ohmic electrode - Google Patents

Ohmic electrode material for p-type 3-5 families compound semiconductor and forming method of ohmic electrode

Info

Publication number
JPS5521186A
JPS5521186A JP9524078A JP9524078A JPS5521186A JP S5521186 A JPS5521186 A JP S5521186A JP 9524078 A JP9524078 A JP 9524078A JP 9524078 A JP9524078 A JP 9524078A JP S5521186 A JPS5521186 A JP S5521186A
Authority
JP
Japan
Prior art keywords
ohmic electrode
type layer
electrode
type
vacuum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9524078A
Other languages
Japanese (ja)
Other versions
JPS6238850B2 (en
Inventor
Kotaro Mitsui
Susumu Yoshida
Josuke Nakada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9524078A priority Critical patent/JPS5521186A/en
Publication of JPS5521186A publication Critical patent/JPS5521186A/en
Publication of JPS6238850B2 publication Critical patent/JPS6238850B2/ja
Granted legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To make P+ diffusion unnecessary thus reducing working hours by metalizing Zn and Ni on P-type layer surface of a semiconductor heated in a vacuum and by its treating at the specific temperature in an indifferent or reducing atmosphere.
CONSTITUTION: Electrode material is composed of Zn and Ni. After having Zn and Ni metalized on the P-type layer 2 surface of III-V families compounds semiconductor base heated at 100∼450°C in a vacuum, an electrode 4 will be formed by heat treatment at 450∼550°C in an indifferent or reducing atmosphere. For example, the liquid phase epitaxial GaAs wafer having PN junction will be heated in a vacuum metalizing device, thus metalizing Zn and Ni on the P-type layer 2 surface followed by forming Zn-Ni electrode 4 by heat treatment at 450°C in N2 or H2 atmosphere 4. Next, the surface of N-type layer 3 will be grinded and after forming thereon Au-Ge alloy N-type electrode 5, wafer will be isolated into 0.4mm×0.4mm infrared light emitting diode pellets.
COPYRIGHT: (C)1980,JPO&Japio
JP9524078A 1978-08-03 1978-08-03 Ohmic electrode material for p-type 3-5 families compound semiconductor and forming method of ohmic electrode Granted JPS5521186A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9524078A JPS5521186A (en) 1978-08-03 1978-08-03 Ohmic electrode material for p-type 3-5 families compound semiconductor and forming method of ohmic electrode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9524078A JPS5521186A (en) 1978-08-03 1978-08-03 Ohmic electrode material for p-type 3-5 families compound semiconductor and forming method of ohmic electrode

Publications (2)

Publication Number Publication Date
JPS5521186A true JPS5521186A (en) 1980-02-15
JPS6238850B2 JPS6238850B2 (en) 1987-08-20

Family

ID=14132225

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9524078A Granted JPS5521186A (en) 1978-08-03 1978-08-03 Ohmic electrode material for p-type 3-5 families compound semiconductor and forming method of ohmic electrode

Country Status (1)

Country Link
JP (1) JPS5521186A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01307219A (en) * 1988-06-03 1989-12-12 Matsushita Electron Corp Electrode forming method for semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01307219A (en) * 1988-06-03 1989-12-12 Matsushita Electron Corp Electrode forming method for semiconductor device

Also Published As

Publication number Publication date
JPS6238850B2 (en) 1987-08-20

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