JPS5585060A - Forming method of ohmic electrode to p-type 3-5 group compound semiconductor - Google Patents

Forming method of ohmic electrode to p-type 3-5 group compound semiconductor

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Publication number
JPS5585060A
JPS5585060A JP16554278A JP16554278A JPS5585060A JP S5585060 A JPS5585060 A JP S5585060A JP 16554278 A JP16554278 A JP 16554278A JP 16554278 A JP16554278 A JP 16554278A JP S5585060 A JPS5585060 A JP S5585060A
Authority
JP
Japan
Prior art keywords
layer
type
ohmic electrode
compound semiconductor
group compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16554278A
Other languages
Japanese (ja)
Inventor
Kotaro Mitsui
Susumu Yoshida
Josuke Nakada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP16554278A priority Critical patent/JPS5585060A/en
Publication of JPS5585060A publication Critical patent/JPS5585060A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To directly form low resistance contact to a substrate with comparatively low concentration, by a method wherein a Zn-Ni-Al multilayer metallic film is made up on a p-type III-V group compound semiconductor substrate, and thermally treated in an inactive or reducing atmosphere at a specified temperature.
CONSTITUTION: An pn-junction is mounted in such a manner that a p-type CaAs layer 2 and an n-type GaAs layer 3 are built up by utilizing a fact that Si is amphoteric. An electrode metallic layer 4 is formed to ensure that a Zn-Ni layer is made up by evaporating Zn and Ni onto the p-type layer 2 with comparatively low concentration successively or simultaneously and an Al layer is evaporated onto the Zn-Ni layer. An ohmic electrode with low contact resistance is built up by thermal treatment in an inactive atmosphere of nitrogen, etc. or a reducing one of hydrogen, etc. at 430∼500°C. Thus, the ohmic electrode can easily be formed in the p-type layer of an infrared, luminous diode using liquid phase epitaxial GaAs of a Si dope.
COPYRIGHT: (C)1980,JPO&Japio
JP16554278A 1978-12-21 1978-12-21 Forming method of ohmic electrode to p-type 3-5 group compound semiconductor Pending JPS5585060A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16554278A JPS5585060A (en) 1978-12-21 1978-12-21 Forming method of ohmic electrode to p-type 3-5 group compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16554278A JPS5585060A (en) 1978-12-21 1978-12-21 Forming method of ohmic electrode to p-type 3-5 group compound semiconductor

Publications (1)

Publication Number Publication Date
JPS5585060A true JPS5585060A (en) 1980-06-26

Family

ID=15814353

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16554278A Pending JPS5585060A (en) 1978-12-21 1978-12-21 Forming method of ohmic electrode to p-type 3-5 group compound semiconductor

Country Status (1)

Country Link
JP (1) JPS5585060A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005136415A (en) * 2003-10-27 2005-05-26 Samsung Electronics Co Ltd III-V group GaN compound semiconductor and p-type electrode applied thereto

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005136415A (en) * 2003-10-27 2005-05-26 Samsung Electronics Co Ltd III-V group GaN compound semiconductor and p-type electrode applied thereto

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