JPS5529783A - Manufacture of semiconductor detector - Google Patents

Manufacture of semiconductor detector

Info

Publication number
JPS5529783A
JPS5529783A JP10372178A JP10372178A JPS5529783A JP S5529783 A JPS5529783 A JP S5529783A JP 10372178 A JP10372178 A JP 10372178A JP 10372178 A JP10372178 A JP 10372178A JP S5529783 A JPS5529783 A JP S5529783A
Authority
JP
Japan
Prior art keywords
film
lead
gate insulating
insulating film
corpuscle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10372178A
Other languages
Japanese (ja)
Inventor
Atsushi Abe
Kuni Ogawa
Masahiro Nishikawa
Satoshi Sekido
Shigeru Hayakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP10372178A priority Critical patent/JPS5529783A/en
Publication of JPS5529783A publication Critical patent/JPS5529783A/en
Pending legal-status Critical Current

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  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

PURPOSE: To avoid the contamination of an extremely-fine-corpuscle film in a process as much as possible by forming the corpuscle film on the gate insulating film of FET by using a mask with a window in a fixed shape.
CONSTITUTION: On semiconductor layer 1 of one conductive type, source region 2 and drain region 3 of FET are formed and gate insulating film 5 is formed between the both. Next, lead-out electrodes 6 and 7 from regions equivalent to the source and drain are selectively formed. Then, vapor-deposition mask 9 close to or in contact with lead-out electrodes 6 and 7 is arranged covering at least the upper parts of lead-out electrode parts 6 and 7 while exposing at least the upper part of gate insulating film part 5 and corpuscles are vapor-deposited to form corpuscle film 11.
COPYRIGHT: (C)1980,JPO&Japio
JP10372178A 1978-08-24 1978-08-24 Manufacture of semiconductor detector Pending JPS5529783A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10372178A JPS5529783A (en) 1978-08-24 1978-08-24 Manufacture of semiconductor detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10372178A JPS5529783A (en) 1978-08-24 1978-08-24 Manufacture of semiconductor detector

Publications (1)

Publication Number Publication Date
JPS5529783A true JPS5529783A (en) 1980-03-03

Family

ID=14361539

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10372178A Pending JPS5529783A (en) 1978-08-24 1978-08-24 Manufacture of semiconductor detector

Country Status (1)

Country Link
JP (1) JPS5529783A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6246170U (en) * 1985-09-09 1987-03-20

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6246170U (en) * 1985-09-09 1987-03-20

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