JPS553631A - Manufacturing silicon carbide substrate - Google Patents

Manufacturing silicon carbide substrate

Info

Publication number: JPS553631A
Authority: JP; Japan
Prior art keywords: substrate; specimine; sic; support; grown
Prior art date: 1978-06-20
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

JP7500378A

Other languages

English (en)

Other versions

JPS609658B2 (ja

Inventor

Toshiki Inooku

Takeshi Sakurai

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Sharp Corp

Original Assignee

Sharp Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1978-06-20

Filing date

1978-06-20

Publication date

1980-01-11

1978-06-20 Application filed by Sharp Corp filed Critical Sharp Corp

1978-06-20 Priority to JP53075003A priority Critical patent/JPS609658B2/ja

1980-01-11 Publication of JPS553631A publication Critical patent/JPS553631A/ja

1985-03-12 Publication of JPS609658B2 publication Critical patent/JPS609658B2/ja

Status Expired legal-status Critical Current

Links

239000000758 substrate Substances 0.000 title abstract 9
238000004519 manufacturing process Methods 0.000 title 1
HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title 1
229910010271 silicon carbide Inorganic materials 0.000 title 1
239000007789 gas Substances 0.000 abstract 2
239000010453 quartz Substances 0.000 abstract 2
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
229910003910 SiCl4 Inorganic materials 0.000 abstract 1
239000012159 carrier gas Substances 0.000 abstract 1
230000009977 dual effect Effects 0.000 abstract 1
239000007792 gaseous phase Substances 0.000 abstract 1
229910002804 graphite Inorganic materials 0.000 abstract 1
239000010439 graphite Substances 0.000 abstract 1
238000010438 heat treatment Methods 0.000 abstract 1
230000008018 melting Effects 0.000 abstract 1
238000002844 melting Methods 0.000 abstract 1
229910021332 silicide Inorganic materials 0.000 abstract 1
FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 abstract 1
229910001220 stainless steel Inorganic materials 0.000 abstract 1
239000010935 stainless steel Substances 0.000 abstract 1
229910052715 tantalum Inorganic materials 0.000 abstract 1
GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract 1

Landscapes

Led Devices (AREA)
Crystals, And After-Treatments Of Crystals (AREA)
Chemical Vapour Deposition (AREA)

JP53075003A 1978-06-20 1978-06-20 炭化珪素基板の製造方法 Expired JPS609658B2 (ja)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
JP53075003A JPS609658B2 (ja)	1978-06-20	1978-06-20	炭化珪素基板の製造方法

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP53075003A JPS609658B2 (ja)	1978-06-20	1978-06-20	炭化珪素基板の製造方法

Publications (2)

Publication Number	Publication Date
JPS553631A true JPS553631A (en)	1980-01-11
JPS609658B2 JPS609658B2 (ja)	1985-03-12

Family

ID=13563581

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP53075003A Expired JPS609658B2 (ja)	1978-06-20	1978-06-20	炭化珪素基板の製造方法

Country Status (1)

Country	Link
JP (1)	JPS609658B2 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4869929A (en) *	1987-11-10	1989-09-26	Air Products And Chemicals, Inc.	Process for preparing sic protective films on metallic or metal impregnated substrates
CN102420178A (zh) *	2011-07-01	2012-04-18	上海华力微电子有限公司	一种避免光阻中毒的碳化硅薄膜新工艺
JP2017154955A (ja) *	2016-03-04	2017-09-07	株式会社デンソー	炭化珪素にて構成される半導体基板およびその製造方法

1978
- 1978-06-20 JP JP53075003A patent/JPS609658B2/ja not_active Expired

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4869929A (en) *	1987-11-10	1989-09-26	Air Products And Chemicals, Inc.	Process for preparing sic protective films on metallic or metal impregnated substrates
CN102420178A (zh) *	2011-07-01	2012-04-18	上海华力微电子有限公司	一种避免光阻中毒的碳化硅薄膜新工艺
JP2017154955A (ja) *	2016-03-04	2017-09-07	株式会社デンソー	炭化珪素にて構成される半導体基板およびその製造方法
US10490635B2 (en)	2016-03-04	2019-11-26	Denso Corporation	Semiconductor substrate made of silicon carbide and method for manufacturing same

Also Published As

Publication number	Publication date
JPS609658B2 (ja)	1985-03-12

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