JPS5553456A - Transistor - Google Patents

Transistor

Info

Publication number
JPS5553456A
JPS5553456A JP12703478A JP12703478A JPS5553456A JP S5553456 A JPS5553456 A JP S5553456A JP 12703478 A JP12703478 A JP 12703478A JP 12703478 A JP12703478 A JP 12703478A JP S5553456 A JPS5553456 A JP S5553456A
Authority
JP
Japan
Prior art keywords
amount
range
impurity
collector
increases
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12703478A
Other languages
Japanese (ja)
Inventor
Hiroshi Saikai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12703478A priority Critical patent/JPS5553456A/en
Publication of JPS5553456A publication Critical patent/JPS5553456A/en
Pending legal-status Critical Current

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  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To reduce dependency on electric voltage of collector floating amount by forming collector base having distribution of impurity density which graudually increases its amount as the distance to the contact surface get large.
CONSTITUTION: A collector base in which impurity containing amount grandually increases as going away from a contact face position 2, of which maximum impurity containing amounts 1, 3 have differnce of more than number of 3 figures within the range of 15μ from the contact face position 2, is disposed. A rare range including the contact face position 2 is vacant layer and all impurity level is dielected and some exists by diffusion electric potential VD without outer electric voltage. Through applying of inverse electric voltage the range 4 increases and the width forms ε/d coapacity per an unit area. Now, impurity containing amount at the collector base contact part is 1014∼1015/cm3 and maximum containing amount having difference of more than number of 3 figures is disposed within the range of 15μ without uniform area and then the changes of collector floating amount is very small and stabilized.
COPYRIGHT: (C)1980,JPO&Japio
JP12703478A 1978-10-16 1978-10-16 Transistor Pending JPS5553456A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12703478A JPS5553456A (en) 1978-10-16 1978-10-16 Transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12703478A JPS5553456A (en) 1978-10-16 1978-10-16 Transistor

Publications (1)

Publication Number Publication Date
JPS5553456A true JPS5553456A (en) 1980-04-18

Family

ID=14950014

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12703478A Pending JPS5553456A (en) 1978-10-16 1978-10-16 Transistor

Country Status (1)

Country Link
JP (1) JPS5553456A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4804634A (en) * 1981-04-24 1989-02-14 National Semiconductor Corporation Integrated circuit lateral transistor structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4804634A (en) * 1981-04-24 1989-02-14 National Semiconductor Corporation Integrated circuit lateral transistor structure

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