JPS57166310A - Formation of amorphous silicon - Google Patents

Formation of amorphous silicon

Info

Publication number
JPS57166310A
JPS57166310A JP56049299A JP4929981A JPS57166310A JP S57166310 A JPS57166310 A JP S57166310A JP 56049299 A JP56049299 A JP 56049299A JP 4929981 A JP4929981 A JP 4929981A JP S57166310 A JPS57166310 A JP S57166310A
Authority
JP
Japan
Prior art keywords
amorphous silicon
electrodes
ohmic contact
aluminum
formed under
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56049299A
Other languages
Japanese (ja)
Other versions
JPS5933532B2 (en
Inventor
Kazuhisa Kato
Hiroyuki Tanigami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Stanley Electric Co Ltd
Original Assignee
Stanley Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stanley Electric Co Ltd filed Critical Stanley Electric Co Ltd
Priority to JP56049299A priority Critical patent/JPS5933532B2/en
Priority to US06/363,236 priority patent/US4446168A/en
Publication of JPS57166310A publication Critical patent/JPS57166310A/en
Publication of JPS5933532B2 publication Critical patent/JPS5933532B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: When amorphous silicon for semiconductor elements is produced by the glow discharge method, the discharge power is specified in the zone contacting with the aluminum electrode to bring the aluminum into ohmic contact with the amorphous silicon.
CONSTITUTION: In the reaction chamber, SiH4 containing PH3 is decomposed with glow discharge to form amorphous Si(a-Si) on the base plate. When a semiconductor is formed using the a-Si, an ohmic contact point is set on a part and used as an electrode. These electrodes 13, 13' are made of aluminum and a-Si of the a-Si in the zone contacting with the electrodes is formed under a discharge power of over 0.3W/cm2, thus ohmic contact is formed. In order to develop this effect more efficiently, the a-Si film in the active zone is formed under low discharge power conditions and that in the zone contacting with the electrodes is formed under the above conditions until to a certain thickness.
COPYRIGHT: (C)1982,JPO&Japio
JP56049299A 1981-04-03 1981-04-03 Method of forming amorphous silicon Expired JPS5933532B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP56049299A JPS5933532B2 (en) 1981-04-03 1981-04-03 Method of forming amorphous silicon
US06/363,236 US4446168A (en) 1981-04-03 1982-03-29 Method of forming amorphous silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56049299A JPS5933532B2 (en) 1981-04-03 1981-04-03 Method of forming amorphous silicon

Publications (2)

Publication Number Publication Date
JPS57166310A true JPS57166310A (en) 1982-10-13
JPS5933532B2 JPS5933532B2 (en) 1984-08-16

Family

ID=12827042

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56049299A Expired JPS5933532B2 (en) 1981-04-03 1981-04-03 Method of forming amorphous silicon

Country Status (2)

Country Link
US (1) US4446168A (en)
JP (1) JPS5933532B2 (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS591671A (en) * 1982-05-28 1984-01-07 Fujitsu Ltd Plasma cvd device
JPS6086276A (en) * 1983-10-17 1985-05-15 Canon Inc Formation of deposited film by discharge
US4681653A (en) * 1984-06-01 1987-07-21 Texas Instruments Incorporated Planarized dielectric deposited using plasma enhanced chemical vapor deposition
US4529619A (en) * 1984-07-16 1985-07-16 Xerox Corporation Ohmic contacts for hydrogenated amorphous silicon
NL8501769A (en) * 1984-10-02 1986-05-01 Imec Interuniversitair Micro E BIPOLAR HIGH-JUNCTION TRANSISTOR AND METHOD FOR THE MANUFACTURE THEREOF.
US4797527A (en) * 1985-02-06 1989-01-10 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Electrode for electric discharge machining and method for producing the same
US4902531A (en) * 1986-10-30 1990-02-20 Nihon Shinku Gijutsu Kabushiki Kaisha Vacuum processing method and apparatus
GB8816631D0 (en) * 1988-07-13 1988-08-17 Raychem Ltd Circuit protection arrangement
GB8910854D0 (en) * 1989-05-11 1989-06-28 British Petroleum Co Plc Semiconductor device
US5242663A (en) * 1989-09-20 1993-09-07 Sumitomo Electric Industries, Ltd. Method of and apparatus for synthesizing hard material
JP2626925B2 (en) * 1990-05-23 1997-07-02 三菱電機株式会社 Substrate processing apparatus and substrate processing method
JPH04358530A (en) * 1991-02-25 1992-12-11 Osaka Oxygen Ind Ltd Uniformizing treatment of gaseous mixture
FR2703797B1 (en) * 1993-04-06 1995-06-23 Matra Mhs METHOD AND DEVICE FOR MONITORING THE BORON CONTENT OF BOROPHOSPHOSILICATE.
US5714794A (en) * 1995-04-18 1998-02-03 Hitachi Chemical Company, Ltd. Electrostatic protective device
TW541584B (en) * 2001-06-01 2003-07-11 Semiconductor Energy Lab Semiconductor film, semiconductor device and method for manufacturing same
US8479639B2 (en) * 2007-02-28 2013-07-09 Shalom Levin Beverage preparation device and system

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon

Also Published As

Publication number Publication date
JPS5933532B2 (en) 1984-08-16
US4446168A (en) 1984-05-01

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