JPS5654069A - High withstand voltage mos field-effect semiconductor device - Google Patents

High withstand voltage mos field-effect semiconductor device

Info

Publication number
JPS5654069A
JPS5654069A JP12894879A JP12894879A JPS5654069A JP S5654069 A JPS5654069 A JP S5654069A JP 12894879 A JP12894879 A JP 12894879A JP 12894879 A JP12894879 A JP 12894879A JP S5654069 A JPS5654069 A JP S5654069A
Authority
JP
Japan
Prior art keywords
withstand voltage
layer
high withstand
type
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12894879A
Other languages
Japanese (ja)
Inventor
Hideshi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12894879A priority Critical patent/JPS5654069A/en
Publication of JPS5654069A publication Critical patent/JPS5654069A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain a high withstand voltage MOSFET in good saturation characteristic by a method wherein when a high withstand voltage layer is formed on a source and the upper part of a drain region located on both sides of a gate electrode, the concentration of impurities on the drain side is kept higher than that of the source side. CONSTITUTION:A gate SiO2 film 2 is attached to a P type Si substrate 1, a polycrystalline Si gate electrode 3 given a conductive property by containing impurities therein is formed at a prescribed position on the film 2, and with the gate electrode 3 as a mask, an N<-> type high withstand voltage layer 4 is formed by driving ions in the surface of the substrate 1. Then, an N<+> type source region 8 and a drain region 9 are formed by driving ions through the layer 4. An N<+> type layer 6 is formed between the layer 4 and the region 9 by injection ions at this time in advance to the layer 4 adjacent to the region 9. Thus, the saturation characteristic is improved while changing partially the concentration of impurities of the high withstand voltage layer 4 and simplifying the process.
JP12894879A 1979-10-08 1979-10-08 High withstand voltage mos field-effect semiconductor device Pending JPS5654069A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12894879A JPS5654069A (en) 1979-10-08 1979-10-08 High withstand voltage mos field-effect semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12894879A JPS5654069A (en) 1979-10-08 1979-10-08 High withstand voltage mos field-effect semiconductor device

Publications (1)

Publication Number Publication Date
JPS5654069A true JPS5654069A (en) 1981-05-13

Family

ID=14997358

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12894879A Pending JPS5654069A (en) 1979-10-08 1979-10-08 High withstand voltage mos field-effect semiconductor device

Country Status (1)

Country Link
JP (1) JPS5654069A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0964454A1 (en) * 1998-06-10 1999-12-15 Motorola, Inc. Field-effect transistor having a lightly doped drain region and method of making the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5368581A (en) * 1976-12-01 1978-06-19 Hitachi Ltd Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5368581A (en) * 1976-12-01 1978-06-19 Hitachi Ltd Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0964454A1 (en) * 1998-06-10 1999-12-15 Motorola, Inc. Field-effect transistor having a lightly doped drain region and method of making the same

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