JPS5570021A - Etching method of compound semiconductor - Google Patents

Etching method of compound semiconductor

Info

Publication number
JPS5570021A
JPS5570021A JP14398978A JP14398978A JPS5570021A JP S5570021 A JPS5570021 A JP S5570021A JP 14398978 A JP14398978 A JP 14398978A JP 14398978 A JP14398978 A JP 14398978A JP S5570021 A JPS5570021 A JP S5570021A
Authority
JP
Japan
Prior art keywords
base plate
ionized
group
growth
compound semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14398978A
Other languages
Japanese (ja)
Inventor
Akira Kakui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14398978A priority Critical patent/JPS5570021A/en
Publication of JPS5570021A publication Critical patent/JPS5570021A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To cause growth in line with etching by ionizing, accelerating and feeding a part of constituent elements belonging to V or VI group to the base plate prior to epitaxial growth of semiconductor.
CONSTITUTION: Epitaxial layer is formed on II-VI or III-V group compound semiconductor base plate by means of ion beam method or molecular beam method. Prior to this process, a part of V or VI group elements which are constituent elements of the base plate and growth layer is ionized, for example, through thermionic impact at the ionized section of the upper cell 6 and the base plate is subject to etching through acceleration toward the base plate 3 to which negative voltage is applied at the level more than epitaxial growth energy. In this case, ionized elements account for 1% or less of the total amount emitted from the cell 6 and do not disturb stoichiometry.
COPYRIGHT: (C)1980,JPO&Japio
JP14398978A 1978-11-21 1978-11-21 Etching method of compound semiconductor Pending JPS5570021A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14398978A JPS5570021A (en) 1978-11-21 1978-11-21 Etching method of compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14398978A JPS5570021A (en) 1978-11-21 1978-11-21 Etching method of compound semiconductor

Publications (1)

Publication Number Publication Date
JPS5570021A true JPS5570021A (en) 1980-05-27

Family

ID=15351709

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14398978A Pending JPS5570021A (en) 1978-11-21 1978-11-21 Etching method of compound semiconductor

Country Status (1)

Country Link
JP (1) JPS5570021A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02283018A (en) * 1989-01-31 1990-11-20 Matsushita Electric Ind Co Ltd Processing method of semiconductor base body and manufacture of semiconductor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5386571A (en) * 1977-01-10 1978-07-31 Matsushita Electric Ind Co Ltd Production of self-alignment type crystal

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5386571A (en) * 1977-01-10 1978-07-31 Matsushita Electric Ind Co Ltd Production of self-alignment type crystal

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02283018A (en) * 1989-01-31 1990-11-20 Matsushita Electric Ind Co Ltd Processing method of semiconductor base body and manufacture of semiconductor

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