JPS5570042A - Fabricating method of semiconductor device having isolating oxide region - Google Patents
Fabricating method of semiconductor device having isolating oxide regionInfo
- Publication number
- JPS5570042A JPS5570042A JP13517979A JP13517979A JPS5570042A JP S5570042 A JPS5570042 A JP S5570042A JP 13517979 A JP13517979 A JP 13517979A JP 13517979 A JP13517979 A JP 13517979A JP S5570042 A JPS5570042 A JP S5570042A
- Authority
- JP
- Japan
- Prior art keywords
- region
- isolating
- oxide
- isolating oxide
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052733 gallium Inorganic materials 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Element Separation (AREA)
- Local Oxidation Of Silicon (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To prevent a base electrode from occurrence of leaked channel there under in a semiconductor device by diffusing gallium from the surface of an isolating oxide layer to thereby terminate the pn-junction of an oxide isolating (LOCOS) element under the isolating oxide layer.
CONSTITUTION: An n+-type buried layer is provided on a p-type silicon substrate 1 to epitaxially grow a silicon layer 3 and to coat it with a mask consisting of an oxide film 4 and a silicon nitride film 5. Then, it is selectively oxidized to thereby form an isolating oxide region 7 and remove a silicon nitride film 6b on the base region so as to then diffuse boron therein. Then, gallium is diffused though thin portion of the oxide film 9 and the isolating oxide region 7 thus formed on the surface to thus form a p-type region 10 on an island region 3b. Further, an emitter region 11 and an electrode 13 are formed thereat. Thus, a collector junction is terminated under the isolating oxide region 7 separated from the base electrode 13b to thereby prevent leaked current thereat.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13517979A JPS5570042A (en) | 1979-10-22 | 1979-10-22 | Fabricating method of semiconductor device having isolating oxide region |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13517979A JPS5570042A (en) | 1979-10-22 | 1979-10-22 | Fabricating method of semiconductor device having isolating oxide region |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1258475A Division JPS5187979A (en) | 1975-01-31 | 1975-01-31 | BUNRYOSANKABUTSURYOIKIOJUSURU HANDOTAISOCHINOSEIZOHOHO |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5570042A true JPS5570042A (en) | 1980-05-27 |
Family
ID=15145674
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13517979A Pending JPS5570042A (en) | 1979-10-22 | 1979-10-22 | Fabricating method of semiconductor device having isolating oxide region |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5570042A (en) |
-
1979
- 1979-10-22 JP JP13517979A patent/JPS5570042A/en active Pending
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